Herzl Aharoni

Keyphrases

1. Light-emitting Devices 100%
2. Light Emission 98%
3. Avalanche 96%
4. Silicon Light Source 91%
5. P-n Junction 90%
6. Silicon CMOS 75%
7. Light Intensity 67%
8. SiGe 64%
9. Light-emitting 59%
10. Si LEDs 59%
11. Ion Implantation 51%
12. Diode 51%
13. High Density 50%
14. Chemical Vapor Deposition 46%
15. Low Temperature 46%
16. Standard CMOS Technology 46%
17. Quantum Efficiency 46%
18. Silicon Substrate 46%
19. Field Emission 46%
20. Gate Voltage 45%
21. Low Voltage 44%
22. Two-terminal 44%
23. Current Density 42%
24. Secondary Breakdown 39%
25. Silicon Light-emitting Diodes 39%
26. BiCMOS 38%
27. Light-emitting Diodes 37%
28. Solar Cell 37%
29. Partial Pressure 36%
30. Order of Magnitude 35%
31. Multi-terminal 35%
32. Epitaxial 35%
33. Semiconductors 35%
34. Reverse Current 34%
35. Transistor 34%
36. Avalanche Mode 34%
37. CMOS Technology 33%
38. Emission Intensity 33%
39. Gallium Arsenide 32%
40. Growth Temperature 32%
41. Silica 32%
42. CMOS Integrated Circuitry 32%
43. On chip 31%
44. Epitaxial Layers 31%
45. Circuitry 31%
46. Integrated Optical 31%
47. Optical Emission 29%
48. Gas Phase 28%
49. Single Crystal 28%
50. Photoreflectance 28%