Abstract
Thermal detectors find a significant niche in the market of modern sensors. Bi2T3 and PbTe semiconductors are effective thermoelectrics and excellent candidates for different applications. In the present work, a technology for fabrication of the thermal detector based on high-efficient p-Bi0.5Sb1.5Te3 and n-PbTe films on thin flexible polyimide substrate has been developed. The preparation of films was performed by a flash evaporation method. The high sensitivity of the devices is obtained as a result of the high Seebeck coefficient and low value of thermal conductivity for thin thermoelectric films. The devices operate in the Johnson-Nyquist noise limit of the thermocouple. The high performance enables fast and sensitive detection of low levels of thermal power and infrared radiation at room temperature.
Original language | English |
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Pages (from-to) | 45-52 |
Number of pages | 8 |
Journal | Physics and Chemistry of Solid State |
Volume | 22 |
Issue number | 1 |
DOIs | |
State | Published - 1 Feb 2021 |
Keywords
- Bi2Te3
- PbTe
- Thermal detectors
- Thermoelectric properties
- Thin films
ASJC Scopus subject areas
- Condensed Matter Physics
- General Materials Science
- Physical and Theoretical Chemistry