Abstract
We propose and demonstrate a 1 Gb/s high quantum efficiency Si MSM metal-semiconductor-metal detector which is complementary metal-oxide semiconductor compatible. The detector absorbs over 50% of the light entering the active layer at a wavelength of λ=0.88 μm.
Original language | English |
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Pages (from-to) | 2984 |
Number of pages | 1 |
Journal | Applied Physics Letters |
DOIs | |
State | Published - 1 Dec 1995 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)