(100) and (111) Si MOS transistors fabricated with low growth temperature (400°C) gate oxide by Kr/O2 microwave-excited high-density plasma

Tatsufumi Hamada; Yuji Saito; Masaki Hirayama; Sigetoshi Sugawa; Herzl Aharoni; Tadahiro Ohmi

doi:10.1109/66.964329

(100) and (111) Si MOS transistors fabricated with low growth temperature (400°C) gate oxide by Kr/O₂ microwave-excited high-density plasma

Tatsufumi Hamada, Yuji Saito, Masaki Hirayama, Sigetoshi Sugawa, Herzl Aharoni, Tadahiro Ohmi

Department of Electrical & Computer Engineering

Research output: Contribution to journal › Letter › peer-review

5 Scopus citations

Abstract

A drastic reduction in the growth temperature (400°C) of highly reliable SiO₂ gate oxides grown by a Kr/O₂ microwave-excited high-density plasma technique is shown to yield MOS I-V characteristics comparable to those obtained in transistors with conventionally grown dry gate oxides at 900°C. The benefits of this technique are summarized.

Original language	English
Pages (from-to)	418-420
Number of pages	3
Journal	IEEE Transactions on Semiconductor Manufacturing
Volume	14
Issue number	4
DOIs	https://doi.org/10.1109/66.964329
State	Published - 1 Nov 2001

Keywords

Low-temperature process
Oxygen radical
Plasma process
Surface orientation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/66.964329

Cite this

@article{462853b7081d406f974f0ae531b7f2f7,

title = "(100) and (111) Si MOS transistors fabricated with low growth temperature (400°C) gate oxide by Kr/O2 microwave-excited high-density plasma",

abstract = "A drastic reduction in the growth temperature (400°C) of highly reliable SiO2 gate oxides grown by a Kr/O2 microwave-excited high-density plasma technique is shown to yield MOS I-V characteristics comparable to those obtained in transistors with conventionally grown dry gate oxides at 900°C. The benefits of this technique are summarized.",

keywords = "Low-temperature process, Oxygen radical, Plasma process, Surface orientation",

author = "Tatsufumi Hamada and Yuji Saito and Masaki Hirayama and Sigetoshi Sugawa and Herzl Aharoni and Tadahiro Ohmi",

year = "2001",

month = nov,

day = "1",

doi = "10.1109/66.964329",

language = "English",

volume = "14",

pages = "418--420",

journal = "IEEE Transactions on Semiconductor Manufacturing",

issn = "0894-6507",

publisher = "Institute of Electrical and Electronics Engineers",

number = "4",

}

TY - JOUR

T1 - (100) and (111) Si MOS transistors fabricated with low growth temperature (400°C) gate oxide by Kr/O2 microwave-excited high-density plasma

AU - Hamada, Tatsufumi

AU - Saito, Yuji

AU - Hirayama, Masaki

AU - Sugawa, Sigetoshi

AU - Aharoni, Herzl

AU - Ohmi, Tadahiro

PY - 2001/11/1

Y1 - 2001/11/1

N2 - A drastic reduction in the growth temperature (400°C) of highly reliable SiO2 gate oxides grown by a Kr/O2 microwave-excited high-density plasma technique is shown to yield MOS I-V characteristics comparable to those obtained in transistors with conventionally grown dry gate oxides at 900°C. The benefits of this technique are summarized.

AB - A drastic reduction in the growth temperature (400°C) of highly reliable SiO2 gate oxides grown by a Kr/O2 microwave-excited high-density plasma technique is shown to yield MOS I-V characteristics comparable to those obtained in transistors with conventionally grown dry gate oxides at 900°C. The benefits of this technique are summarized.

KW - Low-temperature process

KW - Oxygen radical

KW - Plasma process

KW - Surface orientation

UR - http://www.scopus.com/inward/record.url?scp=0035507941&partnerID=8YFLogxK

U2 - 10.1109/66.964329

DO - 10.1109/66.964329

M3 - Letter

AN - SCOPUS:0035507941

SN - 0894-6507

VL - 14

SP - 418

EP - 420

JO - IEEE Transactions on Semiconductor Manufacturing

JF - IEEE Transactions on Semiconductor Manufacturing

IS - 4

ER -