(100) and (111) Si MOS transistors fabricated with low growth temperature (400°C) gate oxide by Kr/O2 microwave-excited high-density plasma

Tatsufumi Hamada, Yuji Saito, Masaki Hirayama, Sigetoshi Sugawa, Herzl Aharoni, Tadahiro Ohmi

Research output: Contribution to journalLetterpeer-review

5 Scopus citations

Abstract

A drastic reduction in the growth temperature (400°C) of highly reliable SiO2 gate oxides grown by a Kr/O2 microwave-excited high-density plasma technique is shown to yield MOS I-V characteristics comparable to those obtained in transistors with conventionally grown dry gate oxides at 900°C. The benefits of this technique are summarized.

Original languageEnglish
Pages (from-to)418-420
Number of pages3
JournalIEEE Transactions on Semiconductor Manufacturing
Volume14
Issue number4
DOIs
StatePublished - 1 Nov 2001

Keywords

  • Low-temperature process
  • Oxygen radical
  • Plasma process
  • Surface orientation

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