13. Measurement of the lattice constant of SiGe heteroepitaxial layers grown on a silicon substrate

The lattice constant of thin heteroepitaxial layers composed of single crystal SiGe solid solutions various compositions grown on silicon substracts were measured. The measurements were performed by X-ray diffraction method. The fact that the layers are thin and, therefore, there is also reflection from the silicon substrate (in addition to the reflection from the layer) is utilized for this measurement method. A review of the measurement method is given and the experimental results obtained by irradiating the samples with CuK_α are presented. Specific problems related to the measurement methods and to the layer lattice structure are also presented. There are: resolution problems between the reflections from the layer and the substrate for low Ge concentrations, deformation problems, the effects of the defects and non-uniform changes in the lattice constant at different crystallographic orientations.