@article{a66432c91f2842539cf080a78c86430c,
title = "15-μIT1128 × 128 GaAs/AlxGa1-xas quantum well infrared photodetector focal plane array camera",
abstract = "In this paper, we discuss the development of very sensitive, very long wavelength infrared GaAs/AlxGa1-x As quantum well infrared photodetectors (QWIP's) based on boundto-quasi-bound intersubband transition, fabrication of random reflectors for efficient light coupling, and the demonstration of a 15-jum cutoff 128 x 128 focal plane array imaging camera. Excellent imagery, with a noise equivalent differential temperature (NEAT) of 30 mK has been achieved.",
author = "Gunapala, {Sarath D.} and Park, {Jin S.} and Gabby Sarusi and Lin, {True Lon} and Liu, {John K.} and Maker, {Paul D.} and Muller, {Richard E.} and Shott, {Craig A.} and Ted Hoelter",
note = "Funding Information: Manuscript received December 15, 1995; revised August 1, 1996. The review of this paper was arranged by Editor W. F. Kosonocky. This work was supported by the BMDO/Innovative Science and Technology Office and the NASA Office of Space Access and Technology. S. D. Gunapala, J. K. Liu, P. D. Maker, and R. E. Muller are with the Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109 USA. J. S. Park was with Jet Propulsion Laboratory, Pasadena, CA 91109 USA. He is now with the Intel Corporation, Santa Clara, CA 95052 USA. G. Sarusi was with Jet Propulsion Laboratory, Pasadena, CA 91109 USA. He is now with elop-Electroptics Industries Ltd., Rehovot 76111, Israel. T. L. Lin was with Jet Propulsion Laboratory, Pasadena, CA 91109 USA. He is now with Siliconix, Santa Clara, CA 95056 USA. C. A. Shott and T. Hoelter are with Amber, A Raytheon Company, Goleta, CA 93117 USA. Publisher Item Identifier S 0018-9383(97)00304-3.",
year = "1997",
month = dec,
day = "1",
doi = "10.1109/16.554790",
language = "English",
volume = "44",
pages = "45--50",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers",
number = "1",
}