Abstract
A prototype Silicon CMOS Optical Integrated Circuit (Si CMOS OEIC) was designed and simulated using standard 0.8 micron Bi-CMOS silicon integrated circuit technology. The circuit consisted of an integrated silicon light emitting source, an optical wave-guiding structure, two integrated optical detectors and two high-gain CMOS trans-impedance analogue amplifiers. Simulations with MicroSim PSpice software predict a utilizable bandwidth capability of up to 220 MHz for the trans-impedance amplifier for detected photo-currents at the input of the amplifier in the range of 1 n A to 100 n A and driving a 10mV to 1 V signal into a 100 kΩ load. First iteration OEIC structures were realised in 1.2 micron CMOS technology for various source-waveguide-detector arrangements. Current signal ranging from InA to 1 micro-amp was detected at detectors. The technology seems favorable for first-iteration implementation for digital communications on chip up to 200Mbps.
| Original language | English |
|---|---|
| Pages (from-to) | 25-34 |
| Number of pages | 10 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 5357 |
| DOIs | |
| State | Published - 13 Sep 2004 |
| Externally published | Yes |
| Event | Optoelectronic Integration on Silicon - San Jose, CA, United States Duration: 27 Jan 2004 → 28 Jan 2004 |
Keywords
- CMOS technology
- Opto-electronic integrated circuits
- Silicon LED's
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering