2D Confinement-Driven Epitaxy of Solution-Deposited Cu2O on GaAs

Taissia Rudnikov-Keinan; Shir Gefen; Alexander Rashkovskiy; Mariela J. Pavan; Nitzan Maman; Vladimir Ezersky; Shachar Mishraki; Yuval Golan

doi:10.1021/acsaelm.5c00074

2D Confinement-Driven Epitaxy of Solution-Deposited Cu₂O on GaAs

Taissia Rudnikov-Keinan, Shir Gefen, Alexander Rashkovskiy, Mariela J. Pavan, Nitzan Maman, Vladimir Ezersky, Shachar Mishraki, Yuval Golan

Research output: Contribution to journal › Article › peer-review

Abstract

Epitaxial cuprous oxide (Cu₂O) thin films were deposited from aqueous alkaline solutions within confined microsquares in micropatterned GaAs. Raman spectroscopy and transmission electron microscopy analysis revealed the presence of single-phase Cu₂O, with no detectable CuO impurity. In contrast to (110) textured polycrystalline Cu₂O films obtained on unpatterned substrates, monocrystalline Cu₂O (100) films were obtained within the GaAs microsquares. It was found that a 45° in-plane rotation of the prefabricated microsquares with respect to the [01̅1] GaAs axis promotes Cu₂O (100) monocrystalline growth by minimizing lattice mismatch and providing optimal substrate/film orientation for growth. The thickness of the Cu₂O film and the growth rate within the confined squares emerge as dominant parameters affecting crystal quality and controlling photoluminescence emission, as evidenced by formation of point defects, primarily oxygen vacancies.

Original language	English
Pages (from-to)	3382-3391
Number of pages	10
Journal	ACS Applied Electronic Materials
Volume	7
Issue number	8
DOIs	https://doi.org/10.1021/acsaelm.5c00074
State	Published - 22 Apr 2025

Keywords

copper vacancies
cuprous oxide
laterally restricted growth
micropatterning
monocrystalline thin films
oxygen vacancies
selective area epitaxy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Materials Chemistry
Electrochemistry

Access to Document

10.1021/acsaelm.5c00074

Cite this

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title = "2D Confinement-Driven Epitaxy of Solution-Deposited Cu2O on GaAs",

abstract = "Epitaxial cuprous oxide (Cu2O) thin films were deposited from aqueous alkaline solutions within confined microsquares in micropatterned GaAs. Raman spectroscopy and transmission electron microscopy analysis revealed the presence of single-phase Cu2O, with no detectable CuO impurity. In contrast to (110) textured polycrystalline Cu2O films obtained on unpatterned substrates, monocrystalline Cu2O (100) films were obtained within the GaAs microsquares. It was found that a 45° in-plane rotation of the prefabricated microsquares with respect to the [01̅1] GaAs axis promotes Cu2O (100) monocrystalline growth by minimizing lattice mismatch and providing optimal substrate/film orientation for growth. The thickness of the Cu2O film and the growth rate within the confined squares emerge as dominant parameters affecting crystal quality and controlling photoluminescence emission, as evidenced by formation of point defects, primarily oxygen vacancies.",

keywords = "copper vacancies, cuprous oxide, laterally restricted growth, micropatterning, monocrystalline thin films, oxygen vacancies, selective area epitaxy",

author = "Taissia Rudnikov-Keinan and Shir Gefen and Alexander Rashkovskiy and Pavan, {Mariela J.} and Nitzan Maman and Vladimir Ezersky and Shachar Mishraki and Yuval Golan",

note = "Publisher Copyright: {\textcopyright} 2025 The Authors. Published by American Chemical Society.",

year = "2025",

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doi = "10.1021/acsaelm.5c00074",

language = "English",

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T1 - 2D Confinement-Driven Epitaxy of Solution-Deposited Cu2O on GaAs

AU - Rudnikov-Keinan, Taissia

AU - Gefen, Shir

AU - Rashkovskiy, Alexander

AU - Pavan, Mariela J.

AU - Maman, Nitzan

AU - Ezersky, Vladimir

AU - Mishraki, Shachar

AU - Golan, Yuval

PY - 2025/4/22

Y1 - 2025/4/22

N2 - Epitaxial cuprous oxide (Cu2O) thin films were deposited from aqueous alkaline solutions within confined microsquares in micropatterned GaAs. Raman spectroscopy and transmission electron microscopy analysis revealed the presence of single-phase Cu2O, with no detectable CuO impurity. In contrast to (110) textured polycrystalline Cu2O films obtained on unpatterned substrates, monocrystalline Cu2O (100) films were obtained within the GaAs microsquares. It was found that a 45° in-plane rotation of the prefabricated microsquares with respect to the [01̅1] GaAs axis promotes Cu2O (100) monocrystalline growth by minimizing lattice mismatch and providing optimal substrate/film orientation for growth. The thickness of the Cu2O film and the growth rate within the confined squares emerge as dominant parameters affecting crystal quality and controlling photoluminescence emission, as evidenced by formation of point defects, primarily oxygen vacancies.

AB - Epitaxial cuprous oxide (Cu2O) thin films were deposited from aqueous alkaline solutions within confined microsquares in micropatterned GaAs. Raman spectroscopy and transmission electron microscopy analysis revealed the presence of single-phase Cu2O, with no detectable CuO impurity. In contrast to (110) textured polycrystalline Cu2O films obtained on unpatterned substrates, monocrystalline Cu2O (100) films were obtained within the GaAs microsquares. It was found that a 45° in-plane rotation of the prefabricated microsquares with respect to the [01̅1] GaAs axis promotes Cu2O (100) monocrystalline growth by minimizing lattice mismatch and providing optimal substrate/film orientation for growth. The thickness of the Cu2O film and the growth rate within the confined squares emerge as dominant parameters affecting crystal quality and controlling photoluminescence emission, as evidenced by formation of point defects, primarily oxygen vacancies.

KW - copper vacancies

KW - cuprous oxide

KW - laterally restricted growth

KW - micropatterning

KW - monocrystalline thin films

KW - oxygen vacancies

KW - selective area epitaxy

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