4Electron self-trapping in intermediate-valent

S. Curnoe, K. Kikoin

Research output: Contribution to journalArticlepeer-review

61 Scopus citations


(Formula presented) exhibits intermediate valence in the ground state and unusual behavior at low temperatures. The resistivity and the Hall effect cannot be explained either by conventional sf hybridization or by hopping transport in an impurity band. At least three different energy scales determine three temperature regimes of electron transport in this system. We consider the ground-state properties, the soft valence fluctuations, and the spectrum of band carriers in n-doped (Formula presented) The behavior of excess conduction electrons in the presence of soft valence fluctuations, and the origin of the three energy scales in the spectrum of elementary excitations are discussed. The carriers which determine the low-temperature transport in this system are self-trapped electron-polaron complexes rather than simply electrons in an impurity band. The mechanism of electron trapping is the interaction with soft valence fluctuations.

Original languageEnglish
Pages (from-to)15714-15725
Number of pages12
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number23
StatePublished - 1 Jan 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of '4Electron self-trapping in intermediate-valent'. Together they form a unique fingerprint.

Cite this