A comparative examination of ion implanted n+p junctions annealed at 1000°C and 450°C

Herzl Aharoni, Tadahiro Ohmi, Tadashi Shibata, Mauricio Massazumi Oka, Akira Nakada, Yukio Tamai

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4 Scopus citations


A comparative examination is presented between two series of As+ implanted junctions into (100) Si substrates with varying Boron concentration Ns. The post-implantation annealing temperatures were 1000°C for one series and 450°C for the other. This is done in order to identify the specific cause for the inferior performance of the 450°C junctions which was shown to progressively degrade as Ns increases. It is found that the increase in Nt, the trapping centers concentration in the 450°C junctions is not the only reason for the above behavior and that the trend of Et, the trapping centers energy level with respect to Ei, the intrinsic energy level is dominant. The data show that in contrast to the 1000°C junctions, | Et - Ei | decreases with increasing Ns, in the 450°C junctions, increasing the generation rate, resulting the inferior performance. Junctions in 1.6 × 1014 cm-3 substrates, outstandingly exhibit comparable performance in both annealing temperatures.

Original languageEnglish
Pages (from-to)4606-4617
Number of pages12
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number9 A
StatePublished - 1 Jan 1996


  • Defects
  • Ion implantation
  • Low temperature annealing
  • Reverse-bias current
  • Substrate concentration

ASJC Scopus subject areas

  • Engineering (all)
  • Physics and Astronomy (all)


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