A comparative examination of ion implanted n⁺p junctions annealed at 1000°C and 450°C

A comparative examination is presented between two series of As⁺ implanted junctions into (100) Si substrates with varying Boron concentration N_s. The post-implantation annealing temperatures were 1000°C for one series and 450°C for the other. This is done in order to identify the specific cause for the inferior performance of the 450°C junctions which was shown to progressively degrade as N_s increases. It is found that the increase in N_t, the trapping centers concentration in the 450°C junctions is not the only reason for the above behavior and that the trend of E_t, the trapping centers energy level with respect to E_i, the intrinsic energy level is dominant. The data show that in contrast to the 1000°C junctions, | E_t - E_i | decreases with increasing N_s, in the 450°C junctions, increasing the generation rate, resulting the inferior performance. Junctions in 1.6 × 10¹⁴ cm^-3 substrates, outstandingly exhibit comparable performance in both annealing temperatures.