A comparison between the effects of Sb and Bi doping on the thermoelectric properties of the Ti0.3Zr0.35Hf0.35NiSn half-heusler alloy

O. Appel, Y. Gelbstein

Research output: Contribution to journalArticlepeer-review

80 Scopus citations

Abstract

We deal here with Sb and Bi doping effects of the n-type half-Heusler (HH) Ti0.3Zr0.35Hf0.35NiSn alloy on the measured thermoelectric properties. To date, the thermoelectric effects upon Bi doping on the Sn site of HH alloys have rarely been reported, while Sb has been widely used as a donor dopant. A comparison between the measured transport properties following arc melting and spark plasma sintering of both Bi- and Sb-doped samples indicates a much stronger doping effect upon Sb doping, an effect which was explained thermodynamically. Due to similar lattice thermal conductivity values obtained for the various doped samples, synthesized in a similar experimental route, no practical variations in the thermoelectric figure of merit values were observed between the various investigated samples, an effect which was attributed to compensation between the power factor and electrical thermal conductivity values regardless of the various investigated dopants and doping levels.

Original languageEnglish
Pages (from-to)1976-1982
Number of pages7
JournalJournal of Electronic Materials
Volume43
Issue number6
DOIs
StatePublished - 1 Jun 2014

Keywords

  • Thermoelectric
  • antimony
  • bismuth
  • half-Heusler

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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