Abstract
In this paper the lateral photoresponse and crosstalk (CTK) in complementary metal-oxide-semiconductor (CMOS) photodiodes is investigated by means of a unique sub-micron scanning system (S-cube system) and numerical device simulation. An improved semi-analytical model developed for photoresponse estimation of a photodiode-based CMOS active pixel sensor reveals the photosignal and the CTK dependence on the pixels geometrical shape and arrangement within the array. The trends that promise to increase CMOS image sensor performance are presented and design tradeoffs intended to optimize the photoresponse and minimize CTK are discussed.
Original language | English |
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Pages (from-to) | 2033-2041 |
Number of pages | 9 |
Journal | IEEE Transactions on Electron Devices |
Volume | 51 |
Issue number | 12 |
DOIs | |
State | Published - 1 Dec 2004 |
Keywords
- Active pixel sensor (APS)
- CMOS image sensor
- Crosstalk
- Diffusion process
- Modeling
- Parameter estimation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering