A comprehensive CMOS APS crosstalk study: Photoresponse model, technology, and design trends

Igor Shcherback; Tatiana Danov; Orly Yadid-Pecht

doi:10.1109/TED.2004.839742

A comprehensive CMOS APS crosstalk study: Photoresponse model, technology, and design trends

Igor Shcherback, Tatiana Danov, Orly Yadid-Pecht

Department of Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

In this paper the lateral photoresponse and crosstalk (CTK) in complementary metal-oxide-semiconductor (CMOS) photodiodes is investigated by means of a unique sub-micron scanning system (S-cube system) and numerical device simulation. An improved semi-analytical model developed for photoresponse estimation of a photodiode-based CMOS active pixel sensor reveals the photosignal and the CTK dependence on the pixels geometrical shape and arrangement within the array. The trends that promise to increase CMOS image sensor performance are presented and design tradeoffs intended to optimize the photoresponse and minimize CTK are discussed.

Original language	English
Pages (from-to)	2033-2041
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	51
Issue number	12
DOIs	https://doi.org/10.1109/TED.2004.839742
State	Published - 1 Dec 2004

Keywords

Active pixel sensor (APS)
CMOS image sensor
Crosstalk
Diffusion process
Modeling
Parameter estimation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2004.839742

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abstract = "In this paper the lateral photoresponse and crosstalk (CTK) in complementary metal-oxide-semiconductor (CMOS) photodiodes is investigated by means of a unique sub-micron scanning system (S-cube system) and numerical device simulation. An improved semi-analytical model developed for photoresponse estimation of a photodiode-based CMOS active pixel sensor reveals the photosignal and the CTK dependence on the pixels geometrical shape and arrangement within the array. The trends that promise to increase CMOS image sensor performance are presented and design tradeoffs intended to optimize the photoresponse and minimize CTK are discussed.",

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AB - In this paper the lateral photoresponse and crosstalk (CTK) in complementary metal-oxide-semiconductor (CMOS) photodiodes is investigated by means of a unique sub-micron scanning system (S-cube system) and numerical device simulation. An improved semi-analytical model developed for photoresponse estimation of a photodiode-based CMOS active pixel sensor reveals the photosignal and the CTK dependence on the pixels geometrical shape and arrangement within the array. The trends that promise to increase CMOS image sensor performance are presented and design tradeoffs intended to optimize the photoresponse and minimize CTK are discussed.

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KW - Crosstalk

KW - Diffusion process

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A comprehensive CMOS APS crosstalk study: Photoresponse model, technology, and design trends

Abstract

Keywords

ASJC Scopus subject areas

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