A dependency of quantum efficiency of silicon CMOS n+pp+ LEDs on current density

Lukas W. Snyman, Herzl Aharoni, Monuko du Plessis

Research output: Contribution to journalArticlepeer-review

39 Scopus citations


A dependency of quantmn efficiency of nn+pp+ silicon complementary metal-oxide-semiconductor integrated light-emitting devices on the current density through the active device areas is demonstrated. It was observed that an increase in current density from 1.6 × 10+2 to 2.2 × 10+4 A · cm-2 through the active regions of silicon n+pp+ light-emitting diodes results in an increase in the external quantum efficiency from 1.6 × 10-7 to 5.8 × 10-6 (approximately two orders of magnitude). The fight intensity correspondingly increase from 10-6 to 10-1 W · cm-2 · mA (approximately five orders of magnitude). In our study, the highest efficiency device operate in the p-n junction reverse bias avalanche mode and utilize current density increase by means of vertical and lateral electrical field confinement at a wedge-shaped n+ tip placed in a region of lower doping density and opposite highly conductive p+ regions.

Original languageEnglish
Pages (from-to)2041-2043
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number10
StatePublished - 1 Oct 2005


  • Complementary metal-oxide-semiconductor (CMOS) technology
  • Electroluminescence
  • Light-emitting diodes (LEDs)
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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