A dependency of quantum efficiency of silicon CMOS n+pp+ LEDs on current density

Lukas W. Snyman; Herzl Aharoni; Monuko du Plessis

doi:10.1109/LPT.2005.856448

A dependency of quantum efficiency of silicon CMOS n⁺pp⁺ LEDs on current density

Lukas W. Snyman, Herzl Aharoni, Monuko du Plessis

Department of Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

A dependency of quantmn efficiency of nn⁺pp⁺ silicon complementary metal-oxide-semiconductor integrated light-emitting devices on the current density through the active device areas is demonstrated. It was observed that an increase in current density from 1.6 × 10⁺² to 2.2 × 10⁺⁴ A · cm^-2 through the active regions of silicon n⁺pp⁺ light-emitting diodes results in an increase in the external quantum efficiency from 1.6 × 10^-7 to 5.8 × 10^-6 (approximately two orders of magnitude). The fight intensity correspondingly increase from 10^-6 to 10^-1 W · cm^-2 · mA (approximately five orders of magnitude). In our study, the highest efficiency device operate in the p-n junction reverse bias avalanche mode and utilize current density increase by means of vertical and lateral electrical field confinement at a wedge-shaped n⁺ tip placed in a region of lower doping density and opposite highly conductive p⁺ regions.

Original language	English
Pages (from-to)	2041-2043
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	17
Issue number	10
DOIs	https://doi.org/10.1109/LPT.2005.856448
State	Published - 1 Oct 2005

Keywords

Complementary metal-oxide-semiconductor (CMOS) technology
Electroluminescence
Light-emitting diodes (LEDs)
Silicon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/LPT.2005.856448

Cite this

@article{54a10ff36a5b40c0b9bff299151af285,

title = "A dependency of quantum efficiency of silicon CMOS n+pp+ LEDs on current density",

abstract = "A dependency of quantmn efficiency of nn+pp+ silicon complementary metal-oxide-semiconductor integrated light-emitting devices on the current density through the active device areas is demonstrated. It was observed that an increase in current density from 1.6 × 10+2 to 2.2 × 10+4 A · cm-2 through the active regions of silicon n+pp+ light-emitting diodes results in an increase in the external quantum efficiency from 1.6 × 10-7 to 5.8 × 10-6 (approximately two orders of magnitude). The fight intensity correspondingly increase from 10-6 to 10-1 W · cm-2 · mA (approximately five orders of magnitude). In our study, the highest efficiency device operate in the p-n junction reverse bias avalanche mode and utilize current density increase by means of vertical and lateral electrical field confinement at a wedge-shaped n+ tip placed in a region of lower doping density and opposite highly conductive p+ regions.",

keywords = "Complementary metal-oxide-semiconductor (CMOS) technology, Electroluminescence, Light-emitting diodes (LEDs), Silicon",

author = "Snyman, {Lukas W.} and Herzl Aharoni and {du Plessis}, Monuko",

note = "Funding Information: Manuscript received December 30, 2004; revised June 13, 2005. The subject of this work forms the content of the U.S. Patent 5 944 720, November 30, 1999, U.S. Patent Application 08/938, 730, August 29, 2000, and South Africa Patent 96/2528 and 96/2478, 1996 and 1998, respectively. This work was supported by the Department of Electronic Engineering, University of Pretoria, and by the Carl and Emily Fuchs Foundation in South Africa.",

year = "2005",

month = oct,

day = "1",

doi = "10.1109/LPT.2005.856448",

language = "English",

volume = "17",

pages = "2041--2043",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers",

number = "10",

}

TY - JOUR

T1 - A dependency of quantum efficiency of silicon CMOS n+pp+ LEDs on current density

AU - Snyman, Lukas W.

AU - Aharoni, Herzl

AU - du Plessis, Monuko

N1 - Funding Information: Manuscript received December 30, 2004; revised June 13, 2005. The subject of this work forms the content of the U.S. Patent 5 944 720, November 30, 1999, U.S. Patent Application 08/938, 730, August 29, 2000, and South Africa Patent 96/2528 and 96/2478, 1996 and 1998, respectively. This work was supported by the Department of Electronic Engineering, University of Pretoria, and by the Carl and Emily Fuchs Foundation in South Africa.

PY - 2005/10/1

Y1 - 2005/10/1

N2 - A dependency of quantmn efficiency of nn+pp+ silicon complementary metal-oxide-semiconductor integrated light-emitting devices on the current density through the active device areas is demonstrated. It was observed that an increase in current density from 1.6 × 10+2 to 2.2 × 10+4 A · cm-2 through the active regions of silicon n+pp+ light-emitting diodes results in an increase in the external quantum efficiency from 1.6 × 10-7 to 5.8 × 10-6 (approximately two orders of magnitude). The fight intensity correspondingly increase from 10-6 to 10-1 W · cm-2 · mA (approximately five orders of magnitude). In our study, the highest efficiency device operate in the p-n junction reverse bias avalanche mode and utilize current density increase by means of vertical and lateral electrical field confinement at a wedge-shaped n+ tip placed in a region of lower doping density and opposite highly conductive p+ regions.

AB - A dependency of quantmn efficiency of nn+pp+ silicon complementary metal-oxide-semiconductor integrated light-emitting devices on the current density through the active device areas is demonstrated. It was observed that an increase in current density from 1.6 × 10+2 to 2.2 × 10+4 A · cm-2 through the active regions of silicon n+pp+ light-emitting diodes results in an increase in the external quantum efficiency from 1.6 × 10-7 to 5.8 × 10-6 (approximately two orders of magnitude). The fight intensity correspondingly increase from 10-6 to 10-1 W · cm-2 · mA (approximately five orders of magnitude). In our study, the highest efficiency device operate in the p-n junction reverse bias avalanche mode and utilize current density increase by means of vertical and lateral electrical field confinement at a wedge-shaped n+ tip placed in a region of lower doping density and opposite highly conductive p+ regions.

KW - Complementary metal-oxide-semiconductor (CMOS) technology

KW - Electroluminescence

KW - Light-emitting diodes (LEDs)

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=26844529387&partnerID=8YFLogxK

U2 - 10.1109/LPT.2005.856448

DO - 10.1109/LPT.2005.856448

M3 - Article

AN - SCOPUS:26844529387

SN - 1041-1135

VL - 17

SP - 2041

EP - 2043

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 10

ER -