A dependency of quantmn efficiency of nn+pp+ silicon complementary metal-oxide-semiconductor integrated light-emitting devices on the current density through the active device areas is demonstrated. It was observed that an increase in current density from 1.6 × 10+2 to 2.2 × 10+4 A · cm-2 through the active regions of silicon n+pp+ light-emitting diodes results in an increase in the external quantum efficiency from 1.6 × 10-7 to 5.8 × 10-6 (approximately two orders of magnitude). The fight intensity correspondingly increase from 10-6 to 10-1 W · cm-2 · mA (approximately five orders of magnitude). In our study, the highest efficiency device operate in the p-n junction reverse bias avalanche mode and utilize current density increase by means of vertical and lateral electrical field confinement at a wedge-shaped n+ tip placed in a region of lower doping density and opposite highly conductive p+ regions.
- Complementary metal-oxide-semiconductor (CMOS) technology
- Light-emitting diodes (LEDs)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering