A semiconductor-nanowire assembly of ultrahigh junction density by the Langmuir-Blodgett technique

Somobrata Acharya, Asit Baran Panda, Nataly Belman, Shlomo Efrima, Yuval Golan

Research output: Contribution to journalArticlepeer-review

96 Scopus citations

Abstract

A simple and scalable approach for the hierarchical assembly of 2D and 3D ZnSe nanowires by the Langmuir-Blodgett technique was presented. The nanowires are assembled in a controlled way into a parallel array without deviation over a large area. The layer-by-layer assembly of crossed and related structures with a precisely controlled pitch and without the use of any secondary patterning technique was demonstrated. TEM image of individual wires shows well-resolved lattice plans with an inter-planar distance of 0.33±0.02 nm, consistent with wurtzite ZnSe. Semiconductor nanowire sensor arrays and nanoelectronic circuits with ultrahigh junction densities can be realized if electrical contact is achieved to make these nanowires addressable.

Original languageEnglish
Pages (from-to)210-213
Number of pages4
JournalAdvanced Materials
Volume18
Issue number2
DOIs
StatePublished - 19 Jan 2006

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