A sub-VT 2T gain-cell memory for biomedical applications

Pascal Meinerzhagen, Adam Teman, Anatoli Mordakhay, Andreas Burg, Alexander Fish

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

10 Scopus citations

Abstract

Biomedical systems often require several kb of embedded memory and are typically operated in the subthreshold (sub-VT) domain for good energy-efficiency. Embedded memories and their leakage current can easily dominate the overall silicon area and the total power consumption, respectively. Gain-cell based embedded DRAM arrays provide a high-density, low-leakage alternative to SRAM for such systems; however, they are typically designed for operation at nominal or only slightly scaled supply voltages. For the first time, this paper presents a gain-cell array which is fully functional in the sub-VT regime and achieves a data retention time that is more than 104 times higher than the access time. Monte Carlos simulations show that the 2 kb gain-cell array, implemented in a mature 0.18μm CMOS node and supplied with a sub-VT voltage of 400mV, exhibits robust write and read operations at 500 kHz under parametric variations and has over 99% availibilty for read and write access.

Original languageEnglish
Title of host publication2012 IEEE Subthreshold Microelectronics Conference, SubVT 2012
DOIs
StatePublished - 1 Dec 2012
Event2012 IEEE Subthreshold Microelectronics Conference, SubVT 2012 - Waltham, MA, United States
Duration: 9 Oct 201210 Oct 2012

Publication series

Name2012 IEEE Subthreshold Microelectronics Conference, SubVT 2012

Conference

Conference2012 IEEE Subthreshold Microelectronics Conference, SubVT 2012
Country/TerritoryUnited States
CityWaltham, MA
Period9/10/1210/10/12

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