A TEM structural study of thermal stability of magnetic tunnel junctions integrated with CMOS devices

V. K. Lazarov; A. Kohn; T. Uhrmann; T. Dimopoulos; H. Brückl; H. Achard; C. Baraduc; S. Vizzini; H. Oughaddou; B. Aufray; A. D'Avitaya

doi:10.1088/1742-6596/126/1/012002

A TEM structural study of thermal stability of magnetic tunnel junctions integrated with CMOS devices

V. K. Lazarov, A. Kohn, T. Uhrmann, T. Dimopoulos, H. Brückl, H. Achard, C. Baraduc, S. Vizzini, H. Oughaddou, B. Aufray, A. D'Avitaya

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5 Scopus citations

Abstract

We present a TEM/STEM study of the structure and thermal stability of Co/AlO^x/Si, CoFe(B)/MgO/Si and FeNi/SiO^x/Si magnetic junctions deposited directly on patterned Si. In all three types of junctions the films are uniform and continuous. Annealing at 300 at 550°C does not change their structure. CoFe and CoFeB layers remained amorphous after the annealing process.

Original language	English
Article number	012002
Journal	Journal of Physics: Conference Series
Volume	126
DOIs	https://doi.org/10.1088/1742-6596/126/1/012002
State	Published - 1 Jan 2008
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1088/1742-6596/126/1/012002

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title = "A TEM structural study of thermal stability of magnetic tunnel junctions integrated with CMOS devices",

abstract = "We present a TEM/STEM study of the structure and thermal stability of Co/AlOx/Si, CoFe(B)/MgO/Si and FeNi/SiOx/Si magnetic junctions deposited directly on patterned Si. In all three types of junctions the films are uniform and continuous. Annealing at 300 at 550°C does not change their structure. CoFe and CoFeB layers remained amorphous after the annealing process.",

author = "Lazarov, {V. K.} and A. Kohn and T. Uhrmann and T. Dimopoulos and H. Br{\"u}ckl and H. Achard and C. Baraduc and S. Vizzini and H. Oughaddou and B. Aufray and A. D'Avitaya",

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T1 - A TEM structural study of thermal stability of magnetic tunnel junctions integrated with CMOS devices

AU - Lazarov, V. K.

AU - Kohn, A.

AU - Uhrmann, T.

AU - Dimopoulos, T.

AU - Brückl, H.

AU - Achard, H.

AU - Baraduc, C.

AU - Vizzini, S.

AU - Oughaddou, H.

AU - Aufray, B.

AU - D'Avitaya, A.

PY - 2008/1/1

Y1 - 2008/1/1

N2 - We present a TEM/STEM study of the structure and thermal stability of Co/AlOx/Si, CoFe(B)/MgO/Si and FeNi/SiOx/Si magnetic junctions deposited directly on patterned Si. In all three types of junctions the films are uniform and continuous. Annealing at 300 at 550°C does not change their structure. CoFe and CoFeB layers remained amorphous after the annealing process.

AB - We present a TEM/STEM study of the structure and thermal stability of Co/AlOx/Si, CoFe(B)/MgO/Si and FeNi/SiOx/Si magnetic junctions deposited directly on patterned Si. In all three types of junctions the films are uniform and continuous. Annealing at 300 at 550°C does not change their structure. CoFe and CoFeB layers remained amorphous after the annealing process.

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U2 - 10.1088/1742-6596/126/1/012002

DO - 10.1088/1742-6596/126/1/012002

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AN - SCOPUS:65649100097

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VL - 126

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

M1 - 012002

ER -

A TEM structural study of thermal stability of magnetic tunnel junctions integrated with CMOS devices

Abstract

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