Abstract
A complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) camera with wide dynamic range (WDR) linear output and in-pixel frame difference is reported in this paper. The double in-pixel storage enables the global shutter operation in addition to frame difference and WDR functions. The pixel pitch is 7μm with a fill factor of 15%. A 64×64 APS array with on-chip Dynamic Random Access Memory (DRAM) has been fabricated in 0.18μ 1P6M CMOS technology. The pixels operate with 1.8 voltage supply for low-power operation. The expected power consumption is around 50 mWatts.
Original language | English |
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Article number | 1464656 |
Pages (from-to) | 588-591 |
Number of pages | 4 |
Journal | Proceedings - IEEE International Symposium on Circuits and Systems |
DOIs | |
State | Published - 1 Dec 2005 |
Externally published | Yes |
Event | IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 - Kobe, Japan Duration: 23 May 2005 → 26 May 2005 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering