A wide dynamic range cmos active pixel sensor with frame difference

Vadim Milirud; Leonid Fleshel; Wenjing Zhang; Graham Jullien; Orly Yadid-Pecht

doi:10.1109/ISCAS.2005.1464656

A wide dynamic range cmos active pixel sensor with frame difference

Vadim Milirud, Leonid Fleshel, Wenjing Zhang, Graham Jullien, Orly Yadid-Pecht

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

A complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) camera with wide dynamic range (WDR) linear output and in-pixel frame difference is reported in this paper. The double in-pixel storage enables the global shutter operation in addition to frame difference and WDR functions. The pixel pitch is 7μm with a fill factor of 15%. A 64×64 APS array with on-chip Dynamic Random Access Memory (DRAM) has been fabricated in 0.18μ 1P6M CMOS technology. The pixels operate with 1.8 voltage supply for low-power operation. The expected power consumption is around 50 mWatts.

Original language	English
Article number	1464656
Pages (from-to)	588-591
Number of pages	4
Journal	Proceedings - IEEE International Symposium on Circuits and Systems
DOIs	https://doi.org/10.1109/ISCAS.2005.1464656
State	Published - 1 Dec 2005
Externally published	Yes
Event	IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 - Kobe, Japan Duration: 23 May 2005 → 26 May 2005

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/ISCAS.2005.1464656

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title = "A wide dynamic range cmos active pixel sensor with frame difference",

abstract = "A complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) camera with wide dynamic range (WDR) linear output and in-pixel frame difference is reported in this paper. The double in-pixel storage enables the global shutter operation in addition to frame difference and WDR functions. The pixel pitch is 7μm with a fill factor of 15%. A 64×64 APS array with on-chip Dynamic Random Access Memory (DRAM) has been fabricated in 0.18μ 1P6M CMOS technology. The pixels operate with 1.8 voltage supply for low-power operation. The expected power consumption is around 50 mWatts.",

author = "Vadim Milirud and Leonid Fleshel and Wenjing Zhang and Graham Jullien and Orly Yadid-Pecht",

year = "2005",

month = dec,

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doi = "10.1109/ISCAS.2005.1464656",

language = "English",

pages = "588--591",

journal = "Proceedings - IEEE International Symposium on Circuits and Systems",

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publisher = "Institute of Electrical and Electronics Engineers",

note = "IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 ; Conference date: 23-05-2005 Through 26-05-2005",

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T1 - A wide dynamic range cmos active pixel sensor with frame difference

AU - Milirud, Vadim

AU - Fleshel, Leonid

AU - Zhang, Wenjing

AU - Jullien, Graham

AU - Yadid-Pecht, Orly

PY - 2005/12/1

Y1 - 2005/12/1

N2 - A complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) camera with wide dynamic range (WDR) linear output and in-pixel frame difference is reported in this paper. The double in-pixel storage enables the global shutter operation in addition to frame difference and WDR functions. The pixel pitch is 7μm with a fill factor of 15%. A 64×64 APS array with on-chip Dynamic Random Access Memory (DRAM) has been fabricated in 0.18μ 1P6M CMOS technology. The pixels operate with 1.8 voltage supply for low-power operation. The expected power consumption is around 50 mWatts.

AB - A complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) camera with wide dynamic range (WDR) linear output and in-pixel frame difference is reported in this paper. The double in-pixel storage enables the global shutter operation in addition to frame difference and WDR functions. The pixel pitch is 7μm with a fill factor of 15%. A 64×64 APS array with on-chip Dynamic Random Access Memory (DRAM) has been fabricated in 0.18μ 1P6M CMOS technology. The pixels operate with 1.8 voltage supply for low-power operation. The expected power consumption is around 50 mWatts.

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U2 - 10.1109/ISCAS.2005.1464656

DO - 10.1109/ISCAS.2005.1464656

M3 - Conference article

AN - SCOPUS:46849122147

SN - 0271-4310

SP - 588

EP - 591

JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

M1 - 1464656

T2 - IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005

Y2 - 23 May 2005 through 26 May 2005

ER -

A wide dynamic range cmos active pixel sensor with frame difference

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