A wide dynamic range cmos active pixel sensor with frame difference

Vadim Milirud, Leonid Fleshel, Wenjing Zhang, Graham Jullien, Orly Yadid-Pecht

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations

Abstract

A complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) camera with wide dynamic range (WDR) linear output and in-pixel frame difference is reported in this paper. The double in-pixel storage enables the global shutter operation in addition to frame difference and WDR functions. The pixel pitch is 7μm with a fill factor of 15%. A 64×64 APS array with on-chip Dynamic Random Access Memory (DRAM) has been fabricated in 0.18μ 1P6M CMOS technology. The pixels operate with 1.8 voltage supply for low-power operation. The expected power consumption is around 50 mWatts.

Original languageEnglish
Article number1464656
Pages (from-to)588-591
Number of pages4
JournalProceedings - IEEE International Symposium on Circuits and Systems
DOIs
StatePublished - 1 Dec 2005
Externally publishedYes
EventIEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 - Kobe, Japan
Duration: 23 May 200526 May 2005

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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