Skip to main navigation Skip to search Skip to main content

A wide dynamic range cmos active pixel sensor with frame difference

  • Vadim Milirud
  • , Leonid Fleshel
  • , Wenjing Zhang
  • , Graham Jullien
  • , Orly Yadid-Pecht

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

A complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) camera with wide dynamic range (WDR) linear output and in-pixel frame difference is reported in this paper. The double in-pixel storage enables the global shutter operation in addition to frame difference and WDR functions. The pixel pitch is 7μm with a fill factor of 15%. A 64×64 APS array with on-chip Dynamic Random Access Memory (DRAM) has been fabricated in 0.18μ 1P6M CMOS technology. The pixels operate with 1.8 voltage supply for low-power operation. The expected power consumption is around 50 mWatts.

Original languageEnglish
Title of host publicationProceedings - IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005
PublisherInstitute of Electrical and Electronics Engineers
Pages588-591
Number of pages4
ISBN (Print)9780780388345
DOIs
StatePublished - 1 Jan 2005
Externally publishedYes
Event2005 IEEE International Symposium on Circuits and Systems, ISCAS 2005 - Kobe, Japan
Duration: 23 May 200526 May 2005

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Conference

Conference2005 IEEE International Symposium on Circuits and Systems, ISCAS 2005
Country/TerritoryJapan
CityKobe
Period23/05/0526/05/05

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'A wide dynamic range cmos active pixel sensor with frame difference'. Together they form a unique fingerprint.

Cite this