@inproceedings{0a60e7a56fbe45ec9239ee43852545b0,
title = "A wide dynamic range cmos active pixel sensor with frame difference",
abstract = "A complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) camera with wide dynamic range (WDR) linear output and in-pixel frame difference is reported in this paper. The double in-pixel storage enables the global shutter operation in addition to frame difference and WDR functions. The pixel pitch is 7μm with a fill factor of 15\%. A 64{\texttimes}64 APS array with on-chip Dynamic Random Access Memory (DRAM) has been fabricated in 0.18μ 1P6M CMOS technology. The pixels operate with 1.8 voltage supply for low-power operation. The expected power consumption is around 50 mWatts.",
author = "Vadim Milirud and Leonid Fleshel and Wenjing Zhang and Graham Jullien and Orly Yadid-Pecht",
year = "2005",
month = jan,
day = "1",
doi = "10.1109/ISCAS.2005.1464656",
language = "English",
isbn = "9780780388345",
series = "Proceedings - IEEE International Symposium on Circuits and Systems",
publisher = "Institute of Electrical and Electronics Engineers",
pages = "588--591",
booktitle = "Proceedings - IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005",
address = "United States",
note = "2005 IEEE International Symposium on Circuits and Systems, ISCAS 2005 ; Conference date: 23-05-2005 Through 26-05-2005",
}