AC conductivity of inhomogeneous semiconductors in the presence of classically high magnetic field

Results are given of a calculation of the transverse effective ac conductivity, σ ⟂eff(ω), in electrically in homogeneous semiconductors in the presence of a classically high magnetic field H (ω is the frequency of the alternating electric field). The expressions for σ ⟂eff(ω) are obtained with the aid of summation of diagrammatic series. It is shown that in the frequency range ωτ_M ≪ ξ^2/3β^−4/3 (τ_M is the Maxwell relaxation time; β = μH/c; μ the carrier mobility; ξ = 〈(n(r) − 〈n〉)2〉/〈n〉2; n(r) is the local value of the carrier density; 〈n〉 its mean value) σ ⟂eff (ω) ∝ H^−4/3, and when ωτ_M ≈ ξ^2/3β^−4/3 there should be a change in the dependence on H. When ωτ_M ⪆ ξ^2/3β^−4/3, σ ⟂eff(ω) ∝ HP⁻² like in an homogeneous sample.