Activating electrochemically inert ZnMn2O4 via a synergistic effect of cationic and anionic dual vacancies

Jiangfeng Huang, Chao Wang, Yin Huang, Yanchen Jiang, Jingwen Sun, Liang Xue, Junwu Zhu

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

MnO2 species are inexpensive and attractive green cathode materials for aqueous zinc-ion batteries (AZIBs). Still, they usually degrade into electrochemically inert ZnMn2O4 (ZMO) due to the sluggish diffusion ability of Zn2+, which blocks the internal lattice diffusion channels, significantly hindering the cycle stability of AZIBs. Although Zn vacancy engineering is expected to enhance the electrochemical performance of ZMO, there is an urgent need to develop defect structures that can effectively inhibit the further generation of inert ZMO. Herein, to activate the electrochemical performance of the spent ZMO, cationic and anionic dual vacancies are introduced into ZMO through an acid treatment. The acid treatment removes Zn2+ and forms H-ZMO with Mn cationic vacancies and O anionic vacancies. The dual vacancy structure increases the diffusion energy barrier of the octahedron-tetragon-octahedron transition for Zn2+, thereby inhibiting the transition of MnO2 to ZMO. Moreover, we reveal that the vacancy structure can promote the Grotthuss hopping ability of H+ as the dominant carrier, thereby significantly improving the electrochemical properties of H-ZMO. This article provides universal principles and methods for recycling and activating the electrochemical performance of ZMO, which is conducive to large-scale industrialization processes of AZIBs cathode.

Original languageEnglish
Article number111553
JournalJournal of Energy Storage
Volume88
DOIs
StatePublished - 30 May 2024
Externally publishedYes

Keywords

  • Dual vacancy strategy
  • Grotthuss hopping
  • Zinc-ion batteries
  • ZnMnO recovery

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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