Active area shape influence on the dark current of CMOS imagers

Igor Shcherback; Alexander Belenky; Orly Yadid-Pecht

doi:10.1117/12.463445

Active area shape influence on the dark current of CMOS imagers

Igor Shcherback, Alexander Belenky, Orly Yadid-Pecht

Department of Electrical & Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

This work presents an empirical dark current model for CMOS Active Pixel Sensors (APS). The model is based on experimental data taken of a 256 × 256 APS chip fabricated via HP in a standard 0.5μm CMOS technology process. This quantitative model determines the pixel dark current dependence on two contributing factors: the "ideal" dark current determined by the photodiode junction, introduced here as a stable shot noise influence of the device active area, and a leakage current due to the device active area shape, i.e., the number of corners present in the photodiode and their angles. This part is introduced as a process induced structure stress effect.

Original language	English
Pages (from-to)	117-124
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4669
DOIs	https://doi.org/10.1117/12.463445
State	Published - 1 Jan 2002
Event	Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications III - San Jose, CA, United States Duration: 21 Jan 2002 → 23 Jan 2002

Keywords

APS
CMOS image sensors
Dark current
Modeling
Photodiodes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.463445

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AU - Shcherback, Igor

AU - Belenky, Alexander

AU - Yadid-Pecht, Orly

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N2 - This work presents an empirical dark current model for CMOS Active Pixel Sensors (APS). The model is based on experimental data taken of a 256 × 256 APS chip fabricated via HP in a standard 0.5μm CMOS technology process. This quantitative model determines the pixel dark current dependence on two contributing factors: the "ideal" dark current determined by the photodiode junction, introduced here as a stable shot noise influence of the device active area, and a leakage current due to the device active area shape, i.e., the number of corners present in the photodiode and their angles. This part is introduced as a process induced structure stress effect.

AB - This work presents an empirical dark current model for CMOS Active Pixel Sensors (APS). The model is based on experimental data taken of a 256 × 256 APS chip fabricated via HP in a standard 0.5μm CMOS technology process. This quantitative model determines the pixel dark current dependence on two contributing factors: the "ideal" dark current determined by the photodiode junction, introduced here as a stable shot noise influence of the device active area, and a leakage current due to the device active area shape, i.e., the number of corners present in the photodiode and their angles. This part is introduced as a process induced structure stress effect.

KW - APS

KW - CMOS image sensors

KW - Dark current

KW - Modeling

KW - Photodiodes

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VL - 4669

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EP - 124

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications III

Y2 - 21 January 2002 through 23 January 2002

ER -

Active area shape influence on the dark current of CMOS imagers

Abstract

Keywords

ASJC Scopus subject areas

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