Active area shape influence on the dark current of CMOS imagers

Igor Shcherback, Alexander Belenky, Orly Yadid-Pecht

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


This work presents an empirical dark current model for CMOS Active Pixel Sensors (APS). The model is based on experimental data taken of a 256 × 256 APS chip fabricated via HP in a standard 0.5μm CMOS technology process. This quantitative model determines the pixel dark current dependence on two contributing factors: the "ideal" dark current determined by the photodiode junction, introduced here as a stable shot noise influence of the device active area, and a leakage current due to the device active area shape, i.e., the number of corners present in the photodiode and their angles. This part is introduced as a process induced structure stress effect.

Original languageEnglish
Pages (from-to)117-124
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 1 Jan 2002
EventSensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications III - San Jose, CA, United States
Duration: 21 Jan 200223 Jan 2002


  • APS
  • CMOS image sensors
  • Dark current
  • Modeling
  • Photodiodes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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