Abstract
This work presents an empirical dark current model for CMOS Active Pixel Sensors (APS). The model is based on experimental data taken of a 256 × 256 APS chip fabricated via HP in a standard 0.5μm CMOS technology process. This quantitative model determines the pixel dark current dependence on two contributing factors: the "ideal" dark current determined by the photodiode junction, introduced here as a stable shot noise influence of the device active area, and a leakage current due to the device active area shape, i.e., the number of corners present in the photodiode and their angles. This part is introduced as a process induced structure stress effect.
| Original language | English |
|---|---|
| Pages (from-to) | 117-124 |
| Number of pages | 8 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 4669 |
| DOIs | |
| State | Published - 1 Jan 2002 |
| Event | Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications III - San Jose, CA, United States Duration: 21 Jan 2002 → 23 Jan 2002 |
Keywords
- APS
- CMOS image sensors
- Dark current
- Modeling
- Photodiodes
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
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