Adsorption and interaction of Sb on Si (001) studied by scanning tunneling microscopy and core-level photoemission

DH Rich; FM Leibsle; A Samsavar; ES Hirschorn; T Miller; T-C Chiang

doi:https://doi.org/10.1103/PhysRevB.39.12758

Adsorption and interaction of Sb on Si (001) studied by scanning tunneling microscopy and core-level photoemission

DH Rich, FM Leibsle, A Samsavar, ES Hirschorn, T Miller, T-C Chiang

Department of Physics

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

Scanning tunneling microscopy (STM) and synchrotron photoemission were used to analyze the Sb/Si(001) interface formation for submonolayer and saturation coverages. The surface-shifted core-level component observed in photoemission for Si(001)-(2×1) was suppressed with the adsorption of Sb. Constant-current STM images which were taken for different sample bias conditions show changes in the spatial distribution of the occupied and unoccupied states derived from the Si-dimer dangling bonds upon Sb adsorption. These observations are interpreted in terms of the formation of Sb-Si bonds and the resulting modifications in the surface electronic properties.

Original language	English GB
Pages (from-to)	12758
Number of pages	1
Journal	Physical Review B
Volume	39
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevB.39.12758
State	Published - 1989

ASJC Scopus subject areas

Condensed Matter Physics

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https://doi.org/10.1103/PhysRevB.39.12758

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title = "Adsorption and interaction of Sb on Si (001) studied by scanning tunneling microscopy and core-level photoemission",

abstract = "Scanning tunneling microscopy (STM) and synchrotron photoemission were used to analyze the Sb/Si(001) interface formation for submonolayer and saturation coverages. The surface-shifted core-level component observed in photoemission for Si(001)-(2×1) was suppressed with the adsorption of Sb. Constant-current STM images which were taken for different sample bias conditions show changes in the spatial distribution of the occupied and unoccupied states derived from the Si-dimer dangling bonds upon Sb adsorption. These observations are interpreted in terms of the formation of Sb-Si bonds and the resulting modifications in the surface electronic properties.",

author = "DH Rich and FM Leibsle and A Samsavar and ES Hirschorn and T Miller and T-C Chiang",

year = "1989",

doi = "https://doi.org/10.1103/PhysRevB.39.12758",

language = "אנגלית",

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journal = "Physical Review B",

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T1 - Adsorption and interaction of Sb on Si (001) studied by scanning tunneling microscopy and core-level photoemission

AU - Rich, DH

AU - Leibsle, FM

AU - Samsavar, A

AU - Hirschorn, ES

AU - Miller, T

AU - Chiang, T-C

PY - 1989

Y1 - 1989

N2 - Scanning tunneling microscopy (STM) and synchrotron photoemission were used to analyze the Sb/Si(001) interface formation for submonolayer and saturation coverages. The surface-shifted core-level component observed in photoemission for Si(001)-(2×1) was suppressed with the adsorption of Sb. Constant-current STM images which were taken for different sample bias conditions show changes in the spatial distribution of the occupied and unoccupied states derived from the Si-dimer dangling bonds upon Sb adsorption. These observations are interpreted in terms of the formation of Sb-Si bonds and the resulting modifications in the surface electronic properties.

AB - Scanning tunneling microscopy (STM) and synchrotron photoemission were used to analyze the Sb/Si(001) interface formation for submonolayer and saturation coverages. The surface-shifted core-level component observed in photoemission for Si(001)-(2×1) was suppressed with the adsorption of Sb. Constant-current STM images which were taken for different sample bias conditions show changes in the spatial distribution of the occupied and unoccupied states derived from the Si-dimer dangling bonds upon Sb adsorption. These observations are interpreted in terms of the formation of Sb-Si bonds and the resulting modifications in the surface electronic properties.

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U2 - https://doi.org/10.1103/PhysRevB.39.12758

DO - https://doi.org/10.1103/PhysRevB.39.12758

M3 - מאמר

SN - 2469-9950

VL - 39

SP - 12758

JO - Physical Review B

JF - Physical Review B

IS - 17

ER -

Adsorption and interaction of Sb on Si (001) studied by scanning tunneling microscopy and core-level photoemission

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