TY - JOUR
T1 - Advanced Nonvolatile Organic Optical Memory Using Self-Assembled Monolayers of Porphyrin-Fullerene Dyads
AU - Frolova, Lyubov A.
AU - Furmansky, Yulia
AU - Shestakov, Alexander F.
AU - Emelianov, Nikita A.
AU - Liddell, Paul A.
AU - Gust, Devens
AU - Visoly-Fisher, Iris
AU - Troshin, Pavel A.
N1 - Publisher Copyright:
© 2022 American Chemical Society. All rights reserved.
PY - 2022/4/6
Y1 - 2022/4/6
N2 - Photo-switchable organic field-effect transistors (OFETs) represent an important platform for designing memory devices for a diverse array of products including security (brand-protection, copy-protection, keyless entry, etc.), credit cards, tickets, and multiple wearable organic electronics applications. Herein, we present a new concept by introducing self-assembled monolayers of donor-acceptor porphyrin-fullerene dyads as light-responsive triggers modulating the electrical characteristics of OFETs and thus pave the way to the development of advanced nonvolatile optical memory. The devices demonstrated wide memory windows, high programming speeds, and long retention times. Furthermore, we show a remarkable effect of the orientation of the fullerene-polymer dyads at the dielectric/semiconductor interface on the device behavior. In particular, the dyads anchored to the dielectric by the porphyrin part induced a reversible photoelectrical switching of OFETs, which is characteristic of flash memory elements. On the contrary, the devices utilizing the dyad anchored by the fullerene moiety demonstrated irreversible switching, thus operating as read-only memory (ROM). A mechanism explaining this behavior is proposed using theoretical DFT calculations. The results suggest the possibility of revisiting hundreds of known donor-acceptor dyads designed previously for artificial photosynthesis or other purposes as versatile optical triggers in advanced OFET-based multibit memory devices for emerging electronic applications.
AB - Photo-switchable organic field-effect transistors (OFETs) represent an important platform for designing memory devices for a diverse array of products including security (brand-protection, copy-protection, keyless entry, etc.), credit cards, tickets, and multiple wearable organic electronics applications. Herein, we present a new concept by introducing self-assembled monolayers of donor-acceptor porphyrin-fullerene dyads as light-responsive triggers modulating the electrical characteristics of OFETs and thus pave the way to the development of advanced nonvolatile optical memory. The devices demonstrated wide memory windows, high programming speeds, and long retention times. Furthermore, we show a remarkable effect of the orientation of the fullerene-polymer dyads at the dielectric/semiconductor interface on the device behavior. In particular, the dyads anchored to the dielectric by the porphyrin part induced a reversible photoelectrical switching of OFETs, which is characteristic of flash memory elements. On the contrary, the devices utilizing the dyad anchored by the fullerene moiety demonstrated irreversible switching, thus operating as read-only memory (ROM). A mechanism explaining this behavior is proposed using theoretical DFT calculations. The results suggest the possibility of revisiting hundreds of known donor-acceptor dyads designed previously for artificial photosynthesis or other purposes as versatile optical triggers in advanced OFET-based multibit memory devices for emerging electronic applications.
KW - OFETs
KW - optical memory
KW - organic field-effect transistors
KW - photoswitching
KW - porphyrin-fullerene dyad
KW - self-assembled monolayer
UR - http://www.scopus.com/inward/record.url?scp=85127835985&partnerID=8YFLogxK
U2 - 10.1021/acsami.1c24979
DO - 10.1021/acsami.1c24979
M3 - Article
C2 - 35343673
AN - SCOPUS:85127835985
SN - 1944-8244
VL - 14
SP - 15461
EP - 15467
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 13
ER -