TY - GEN
T1 - Advanced overlay metrology for CIS bonding applications
AU - Dettoni, Florent
AU - Deloffre, Emilie
AU - Grauer, Yoav
AU - Eisenbach, Shlomo
AU - Penia, Motti
AU - Simkin, Arkady
AU - Elka, Dror
AU - Safrani, Avner
AU - Polli, Marco
AU - De Paola, Francesco
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023/1/1
Y1 - 2023/1/1
N2 - On-product overlay (OPO) control is becoming more and more critical to successful 3D heterogeneous process integration which includes wafer-to-wafer (W2W) bonding. In this work, we will present novel overlay (OVL) methods and experimental metrology results on an advanced CMOS Image Sensor (CIS) W2W process. We will discuss metrology challenges such as thick wafer measurement, target design, precision, and accuracy. Different target designs will be presented and evaluated with the irArcher® 007 from KLA. We will demonstrate Total Measurement Uncertainty (TMU) of 1 nm on production wafers, with Tool-Induced Shift (TIS) values comparable to the current best-in-class metrology tool for single wafer OVL measurement and suitable throughput for High-Volume Manufacturing (HVM). We will highlight the importance of such precise OVL metrology tools to address the sub-50 nm OVL challenge in sub-micron pitch, wafer-to-wafer bonding applications. Inter-field and intra-field terms will be presented. Unexpected intra-field signatures will be discussed. Finally, the impact of bonding OVL on back-side lithography steps will be introduced opening interest for Advanced Process Control (APC) loops.
AB - On-product overlay (OPO) control is becoming more and more critical to successful 3D heterogeneous process integration which includes wafer-to-wafer (W2W) bonding. In this work, we will present novel overlay (OVL) methods and experimental metrology results on an advanced CMOS Image Sensor (CIS) W2W process. We will discuss metrology challenges such as thick wafer measurement, target design, precision, and accuracy. Different target designs will be presented and evaluated with the irArcher® 007 from KLA. We will demonstrate Total Measurement Uncertainty (TMU) of 1 nm on production wafers, with Tool-Induced Shift (TIS) values comparable to the current best-in-class metrology tool for single wafer OVL measurement and suitable throughput for High-Volume Manufacturing (HVM). We will highlight the importance of such precise OVL metrology tools to address the sub-50 nm OVL challenge in sub-micron pitch, wafer-to-wafer bonding applications. Inter-field and intra-field terms will be presented. Unexpected intra-field signatures will be discussed. Finally, the impact of bonding OVL on back-side lithography steps will be introduced opening interest for Advanced Process Control (APC) loops.
KW - 3D Heterogeneous Integration
KW - bonding
KW - CMOS Image Sensor (CIS)
KW - inter-field overlay
KW - intra-field overlay
KW - metrology
KW - More than Moore (MtM)
KW - On Product Overlay (OPO)
KW - overlay (OVL)
KW - Total Measurement Uncertainty (TMU)
KW - Wafer to Wafer (W2W)
UR - http://www.scopus.com/inward/record.url?scp=85168313803&partnerID=8YFLogxK
U2 - 10.1109/ECTC51909.2023.00278
DO - 10.1109/ECTC51909.2023.00278
M3 - Conference contribution
AN - SCOPUS:85168313803
T3 - Proceedings - Electronic Components and Technology Conference
SP - 1638
EP - 1643
BT - Proceedings - IEEE 73rd Electronic Components and Technology Conference, ECTC 2023
PB - Institute of Electrical and Electronics Engineers
T2 - 73rd IEEE Electronic Components and Technology Conference, ECTC 2023
Y2 - 30 May 2023 through 2 June 2023
ER -
