TY - GEN
T1 - All passive KGW/Tm:YAP raman laser
AU - Perez, Eytan
AU - Sheintop, Uzziel
AU - Marcus, Gilad
AU - Noach, Salman
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/6/1
Y1 - 2019/6/1
N2 - High brightness sources in the 2-3 micron region are essential for many applications including wavelength selective microsurgery, material processing, and gas monitoring [1]. Although there are some rare-earth ions which enable such laser sources like Tm, Ho and Cr, those suitable lasers do not tailor all this spectral range. Solid-state Raman lasers are one of the efficient methods enabling to extend the spectral span of high brightness sources [2]. Over the last five years, this trend was also realized in the 2 micron region, using BaWO4 and YVO4 crystals as Raman gain medium [3,4].
AB - High brightness sources in the 2-3 micron region are essential for many applications including wavelength selective microsurgery, material processing, and gas monitoring [1]. Although there are some rare-earth ions which enable such laser sources like Tm, Ho and Cr, those suitable lasers do not tailor all this spectral range. Solid-state Raman lasers are one of the efficient methods enabling to extend the spectral span of high brightness sources [2]. Over the last five years, this trend was also realized in the 2 micron region, using BaWO4 and YVO4 crystals as Raman gain medium [3,4].
UR - https://www.scopus.com/pages/publications/85074670388
U2 - 10.1109/CLEOE-EQEC.2019.8872875
DO - 10.1109/CLEOE-EQEC.2019.8872875
M3 - Conference contribution
AN - SCOPUS:85074670388
T3 - 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
BT - 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
PB - Institute of Electrical and Electronics Engineers
T2 - 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
Y2 - 23 June 2019 through 27 June 2019
ER -