TY - GEN
T1 - All solid state, ultra-fast turn-on time, compact Marx generator
AU - Gertsman, Alexander
AU - Rubinstein, Ze'Ev
AU - Hershkovitz, Moshe
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/6/1
Y1 - 2019/6/1
N2 - This paper presents a High Power Microwave (HPM) modulator. In general, HPM driver based on PFL or capacitor source coupled to the HPM device by high voltage transformer. In current application, due to requirement on ultra-fast rise time, these concepts are unacceptable. The proposed directly coupled HPM driver generates 30kV, 10A pulses with pulse width of 1μs and rise time under 100ns. In order to keep the design compact (portable application) solid-state switches and ceramic capacitors where used. Each stage draw power for the gate driver circuitry from the hold off voltage of the n-stage switch itself, reducing the need for additional floating power supplies. All power stage components were chosen through optimization procedure for further size and complexity reduction. To achieve the ultra-fast turn on and simultaneous operation of all stages a high voltage fast switching MOSFETs were used with a unique gate drive scheme. The design robustness made sure that even in the event of not fully simultaneous switching, the reliability would not be compromised.
AB - This paper presents a High Power Microwave (HPM) modulator. In general, HPM driver based on PFL or capacitor source coupled to the HPM device by high voltage transformer. In current application, due to requirement on ultra-fast rise time, these concepts are unacceptable. The proposed directly coupled HPM driver generates 30kV, 10A pulses with pulse width of 1μs and rise time under 100ns. In order to keep the design compact (portable application) solid-state switches and ceramic capacitors where used. Each stage draw power for the gate driver circuitry from the hold off voltage of the n-stage switch itself, reducing the need for additional floating power supplies. All power stage components were chosen through optimization procedure for further size and complexity reduction. To achieve the ultra-fast turn on and simultaneous operation of all stages a high voltage fast switching MOSFETs were used with a unique gate drive scheme. The design robustness made sure that even in the event of not fully simultaneous switching, the reliability would not be compromised.
UR - https://www.scopus.com/pages/publications/85081597522
U2 - 10.1109/PPPS34859.2019.9009684
DO - 10.1109/PPPS34859.2019.9009684
M3 - Conference contribution
AN - SCOPUS:85081597522
T3 - IEEE International Pulsed Power Conference
BT - 2019 IEEE Pulsed Power and Plasma Science, PPPS 2019
PB - Institute of Electrical and Electronics Engineers
T2 - 2019 IEEE Pulsed Power and Plasma Science, PPPS 2019
Y2 - 23 June 2019 through 29 June 2019
ER -