Ambipolar diffusion anisotropy induced by defects in nipi-doped In 0.2Ga0.8As/GaAs multiple quantum wells

D. H. Rich; K. Rammohan; Y. Tang; H. T. Lin; J. Maserjian; F. J. Grunthaner; A. Larsson; S. I. Borenstain

doi:10.1063/1.111048

Ambipolar diffusion anisotropy induced by defects in nipi-doped In _0.2Ga_0.8As/GaAs multiple quantum wells

D. H. Rich
, K. Rammohan
, Y. Tang
, H. T. Lin
, J. Maserjian
, F. J. Grunthaner
, A. Larsson
, S. I. Borenstain

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The influence of strain-induced defects on the ambipolar diffusive transport of excess electrons and holes in the δ-doped InGaAs/GaAs multiple quantum well system has been examined with a new technique called electron-beam-induced absorption modulation (EBIA). The excess carrier lifetime and diffusion coefficient are obtained by a one-dimensional diffusion experiment that utilizes EBIA. An anisotropy in the ambipolar diffusion along both high-symmetry 〈110〉 directions is found, and this is seen to correlate with the distribution of dark line defects observed in cathodoluminescence.

Original language	English
Pages (from-to)	730-732
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	6
DOIs	https://doi.org/10.1063/1.111048
State	Published - 1 Dec 1994
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.111048

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title = "Ambipolar diffusion anisotropy induced by defects in nipi-doped In 0.2Ga0.8As/GaAs multiple quantum wells",

abstract = "The influence of strain-induced defects on the ambipolar diffusive transport of excess electrons and holes in the δ-doped InGaAs/GaAs multiple quantum well system has been examined with a new technique called electron-beam-induced absorption modulation (EBIA). The excess carrier lifetime and diffusion coefficient are obtained by a one-dimensional diffusion experiment that utilizes EBIA. An anisotropy in the ambipolar diffusion along both high-symmetry 〈110〉 directions is found, and this is seen to correlate with the distribution of dark line defects observed in cathodoluminescence.",

author = "Rich, \{D. H.\} and K. Rammohan and Y. Tang and Lin, \{H. T.\} and J. Maserjian and Grunthaner, \{F. J.\} and A. Larsson and Borenstain, \{S. I.\}",

year = "1994",

month = dec,

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doi = "10.1063/1.111048",

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journal = "Applied Physics Letters",

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T1 - Ambipolar diffusion anisotropy induced by defects in nipi-doped In 0.2Ga0.8As/GaAs multiple quantum wells

AU - Rich, D. H.

AU - Rammohan, K.

AU - Tang, Y.

AU - Lin, H. T.

AU - Maserjian, J.

AU - Grunthaner, F. J.

AU - Larsson, A.

AU - Borenstain, S. I.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - The influence of strain-induced defects on the ambipolar diffusive transport of excess electrons and holes in the δ-doped InGaAs/GaAs multiple quantum well system has been examined with a new technique called electron-beam-induced absorption modulation (EBIA). The excess carrier lifetime and diffusion coefficient are obtained by a one-dimensional diffusion experiment that utilizes EBIA. An anisotropy in the ambipolar diffusion along both high-symmetry 〈110〉 directions is found, and this is seen to correlate with the distribution of dark line defects observed in cathodoluminescence.

AB - The influence of strain-induced defects on the ambipolar diffusive transport of excess electrons and holes in the δ-doped InGaAs/GaAs multiple quantum well system has been examined with a new technique called electron-beam-induced absorption modulation (EBIA). The excess carrier lifetime and diffusion coefficient are obtained by a one-dimensional diffusion experiment that utilizes EBIA. An anisotropy in the ambipolar diffusion along both high-symmetry 〈110〉 directions is found, and this is seen to correlate with the distribution of dark line defects observed in cathodoluminescence.

UR - https://www.scopus.com/pages/publications/6144242335

U2 - 10.1063/1.111048

DO - 10.1063/1.111048

M3 - Article

AN - SCOPUS:6144242335

SN - 0003-6951

VL - 64

SP - 730

EP - 732

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Ambipolar diffusion anisotropy induced by defects in nipi-doped In _0.2Ga_0.8As/GaAs multiple quantum wells

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