Ambipolar diffusion anisotropy induced by defects in nipi-doped In 0.2Ga0.8As/GaAs multiple quantum wells

D. H. Rich, K. Rammohan, Y. Tang, H. T. Lin, J. Maserjian, F. J. Grunthaner, A. Larsson, S. I. Borenstain

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Abstract

The influence of strain-induced defects on the ambipolar diffusive transport of excess electrons and holes in the δ-doped InGaAs/GaAs multiple quantum well system has been examined with a new technique called electron-beam-induced absorption modulation (EBIA). The excess carrier lifetime and diffusion coefficient are obtained by a one-dimensional diffusion experiment that utilizes EBIA. An anisotropy in the ambipolar diffusion along both high-symmetry 〈110〉 directions is found, and this is seen to correlate with the distribution of dark line defects observed in cathodoluminescence.

Original languageEnglish
Pages (from-to)730-732
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number6
DOIs
StatePublished - 1 Dec 1994
Externally publishedYes

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