Amphoteric exciton trapping by 3d-impurities in A2B6 semiconductors

V. N. Fleurov; K. A. Kikoin

doi:10.1016/0038-1098(82)90152-1

Amphoteric exciton trapping by 3d-impurities in A₂B₆ semiconductors

V. N. Fleurov, K. A. Kikoin

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19 Scopus citations

Abstract

It is shown that the neutral deep level state of transition metal impurity in A₂B₆ semiconductors plays a role of amphoteric localization centre for the excitons: it can capture either electron or hole to the d-shell leaving either hole or electron in a loosely bound hydrogenlike orbit respectively. The physical properties of both excitonic states are compared and the possibility to interpret in these terms the optical spectra of ZnS(Se) doped by Ni and Co is discussed.

Original language	English
Pages (from-to)	353-357
Number of pages	5
Journal	Solid State Communications
Volume	42
Issue number	5
DOIs	https://doi.org/10.1016/0038-1098(82)90152-1
State	Published - 1 Jan 1982
Externally published	Yes

ASJC Scopus subject areas

Chemistry (all)
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(82)90152-1

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@article{f94e2721a9e34d849fabc2e1a57a1519,

title = "Amphoteric exciton trapping by 3d-impurities in A2B6 semiconductors",

abstract = "It is shown that the neutral deep level state of transition metal impurity in A2B6 semiconductors plays a role of amphoteric localization centre for the excitons: it can capture either electron or hole to the d-shell leaving either hole or electron in a loosely bound hydrogenlike orbit respectively. The physical properties of both excitonic states are compared and the possibility to interpret in these terms the optical spectra of ZnS(Se) doped by Ni and Co is discussed.",

author = "Fleurov, {V. N.} and Kikoin, {K. A.}",

year = "1982",

month = jan,

day = "1",

doi = "10.1016/0038-1098(82)90152-1",

language = "English",

volume = "42",

pages = "353--357",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd.",

number = "5",

}

TY - JOUR

T1 - Amphoteric exciton trapping by 3d-impurities in A2B6 semiconductors

AU - Fleurov, V. N.

AU - Kikoin, K. A.

PY - 1982/1/1

Y1 - 1982/1/1

N2 - It is shown that the neutral deep level state of transition metal impurity in A2B6 semiconductors plays a role of amphoteric localization centre for the excitons: it can capture either electron or hole to the d-shell leaving either hole or electron in a loosely bound hydrogenlike orbit respectively. The physical properties of both excitonic states are compared and the possibility to interpret in these terms the optical spectra of ZnS(Se) doped by Ni and Co is discussed.

AB - It is shown that the neutral deep level state of transition metal impurity in A2B6 semiconductors plays a role of amphoteric localization centre for the excitons: it can capture either electron or hole to the d-shell leaving either hole or electron in a loosely bound hydrogenlike orbit respectively. The physical properties of both excitonic states are compared and the possibility to interpret in these terms the optical spectra of ZnS(Se) doped by Ni and Co is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0020127023&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(82)90152-1

DO - 10.1016/0038-1098(82)90152-1

M3 - Article

AN - SCOPUS:0020127023

SN - 0038-1098

VL - 42

SP - 353

EP - 357

JO - Solid State Communications

JF - Solid State Communications

IS - 5

ER -

Amphoteric exciton trapping by 3d-impurities in A₂B₆ semiconductors

Abstract

ASJC Scopus subject areas

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