It is shown that the neutral deep level state of transition metal impurity in A2B6 semiconductors plays a role of amphoteric localization centre for the excitons: it can capture either electron or hole to the d-shell leaving either hole or electron in a loosely bound hydrogenlike orbit respectively. The physical properties of both excitonic states are compared and the possibility to interpret in these terms the optical spectra of ZnS(Se) doped by Ni and Co is discussed.
|Number of pages||5|
|Journal||Solid State Communications|
|State||Published - 1 Jan 1982|
ASJC Scopus subject areas
- Chemistry (all)
- Condensed Matter Physics
- Materials Chemistry