Amphoteric exciton trapping by 3d-impurities in A2B6 semiconductors

V. N. Fleurov, K. A. Kikoin

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

It is shown that the neutral deep level state of transition metal impurity in A2B6 semiconductors plays a role of amphoteric localization centre for the excitons: it can capture either electron or hole to the d-shell leaving either hole or electron in a loosely bound hydrogenlike orbit respectively. The physical properties of both excitonic states are compared and the possibility to interpret in these terms the optical spectra of ZnS(Se) doped by Ni and Co is discussed.

Original languageEnglish
Pages (from-to)353-357
Number of pages5
JournalSolid State Communications
Volume42
Issue number5
DOIs
StatePublished - 1 Jan 1982
Externally publishedYes

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Amphoteric exciton trapping by 3d-impurities in A2B6 semiconductors'. Together they form a unique fingerprint.

Cite this