Amplitude and Phase Modulation in a 4/μm-Thick Gaas/Aigaas Multiple Quantum well Modulator

T. Y. Hsu; W. Y. Wu; U. Efron

doi:10.1049/el:19880409

Amplitude and Phase Modulation in a 4/μm-Thick Gaas/Aigaas Multiple Quantum well Modulator

T. Y. Hsu
, W. Y. Wu
, U. Efron

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

The experimental results of a 4μn-thick GaAs/AIGaAs MQW modulator show an~10:1 on/off ratio with an applied voltage of 20 V (Δα~6×103/cm at E~50kV/cm) and~0-4πrad of phase shift with an applied voltage of 10 V (&# Optoelectronics, Optical modulation, Modulators, Electro-opticsx0394;n~0 04 at E~25 kV/cm). Such high electro-optical modulations have previously been reported only in MQW optical waveguide modulators.

Original language	English
Pages (from-to)	603-605
Number of pages	3
Journal	Electronics Letters
Volume	24
Issue number	10
DOIs	https://doi.org/10.1049/el:19880409
State	Published - 1 Jan 1988
Externally published	Yes

Keywords

Electro-optics
Modulators
Optical modulation
Optoelectronics

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19880409

Cite this

@article{c55aa7b45d4d4b6e865d724c93adf395,

title = "Amplitude and Phase Modulation in a 4/μm-Thick Gaas/Aigaas Multiple Quantum well Modulator",

abstract = "The experimental results of a 4μn-thick GaAs/AIGaAs MQW modulator show an\textasciitilde{}10:1 on/off ratio with an applied voltage of 20 V (Δα\textasciitilde{}6×103/cm at E\textasciitilde{}50kV/cm) and\textasciitilde{}0-4πrad of phase shift with an applied voltage of 10 V (\&\# Optoelectronics, Optical modulation, Modulators, Electro-opticsx0394;n\textasciitilde{}0 04 at E\textasciitilde{}25 kV/cm). Such high electro-optical modulations have previously been reported only in MQW optical waveguide modulators.",

keywords = "Electro-optics, Modulators, Optical modulation, Optoelectronics",

author = "Hsu, \{T. Y.\} and Wu, \{W. Y.\} and U. Efron",

year = "1988",

month = jan,

day = "1",

doi = "10.1049/el:19880409",

language = "English",

volume = "24",

pages = "603--605",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "10",

}

TY - JOUR

T1 - Amplitude and Phase Modulation in a 4/μm-Thick Gaas/Aigaas Multiple Quantum well Modulator

AU - Hsu, T. Y.

AU - Wu, W. Y.

AU - Efron, U.

PY - 1988/1/1

Y1 - 1988/1/1

N2 - The experimental results of a 4μn-thick GaAs/AIGaAs MQW modulator show an~10:1 on/off ratio with an applied voltage of 20 V (Δα~6×103/cm at E~50kV/cm) and~0-4πrad of phase shift with an applied voltage of 10 V (&# Optoelectronics, Optical modulation, Modulators, Electro-opticsx0394;n~0 04 at E~25 kV/cm). Such high electro-optical modulations have previously been reported only in MQW optical waveguide modulators.

AB - The experimental results of a 4μn-thick GaAs/AIGaAs MQW modulator show an~10:1 on/off ratio with an applied voltage of 20 V (Δα~6×103/cm at E~50kV/cm) and~0-4πrad of phase shift with an applied voltage of 10 V (&# Optoelectronics, Optical modulation, Modulators, Electro-opticsx0394;n~0 04 at E~25 kV/cm). Such high electro-optical modulations have previously been reported only in MQW optical waveguide modulators.

KW - Electro-optics

KW - Modulators

KW - Optical modulation

KW - Optoelectronics

UR - https://www.scopus.com/pages/publications/0024011937

U2 - 10.1049/el:19880409

DO - 10.1049/el:19880409

M3 - Article

AN - SCOPUS:0024011937

SN - 0013-5194

VL - 24

SP - 603

EP - 605

JO - Electronics Letters

JF - Electronics Letters

IS - 10

ER -

Amplitude and Phase Modulation in a 4/μm-Thick Gaas/Aigaas Multiple Quantum well Modulator

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this