AM4: MRAM Crossbar Based CAM/TCAM/ACAM/AP for In-Memory Computing

Esteban Garzon; Marco Lanuzza; Adam Teman; Leonid Yavits

doi:10.1109/JETCAS.2023.3243222

AM⁴: MRAM Crossbar Based CAM/TCAM/ACAM/AP for In-Memory Computing

Esteban Garzon
, Marco Lanuzza
, Adam Teman
, Leonid Yavits

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

In-memory computing seeks to minimize data movement and alleviate the memory wall by computing in-situ, in the same place that the data is located. One of the key emerging technologies that promises to enable such computing-in-memory is spin-transfer torque magnetic tunnel junction (STT-MTJ). This paper proposes AM4, a combined STT-MTJ-based Content Addressable Memory (CAM), Ternary CAM (TCAM), approximate matching (similarity search) CAM (ACAM), and in-memory Associative Processor (AP) design, inspired by the recently announced Samsung MRAM crossbar. We demonstrate and evaluate the performance and energy-efficiency of the AM4-based AP using a variety of data intensive workloads. We show that an AM4-based AP outperforms state-of-the-art solutions both in performance (with the average speedup of about 10 ×) and energy-efficiency (by about 60 × on average).

Original language	English
Pages (from-to)	408-421
Number of pages	14
Journal	IEEE Journal on Emerging and Selected Topics in Circuits and Systems
Volume	13
Issue number	1
DOIs	https://doi.org/10.1109/JETCAS.2023.3243222
State	Published - 1 Mar 2023
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

CAM
MRAM
MTJ
Non-von Neumann computer architecture
TCAM
associative memories
associative processor
double-barrier MTJ
emerging memories

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/JETCAS.2023.3243222

Cite this

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title = "AM4: MRAM Crossbar Based CAM/TCAM/ACAM/AP for In-Memory Computing",

abstract = "In-memory computing seeks to minimize data movement and alleviate the memory wall by computing in-situ, in the same place that the data is located. One of the key emerging technologies that promises to enable such computing-in-memory is spin-transfer torque magnetic tunnel junction (STT-MTJ). This paper proposes AM4, a combined STT-MTJ-based Content Addressable Memory (CAM), Ternary CAM (TCAM), approximate matching (similarity search) CAM (ACAM), and in-memory Associative Processor (AP) design, inspired by the recently announced Samsung MRAM crossbar. We demonstrate and evaluate the performance and energy-efficiency of the AM4-based AP using a variety of data intensive workloads. We show that an AM4-based AP outperforms state-of-the-art solutions both in performance (with the average speedup of about 10 ×) and energy-efficiency (by about 60 × on average).",

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N2 - In-memory computing seeks to minimize data movement and alleviate the memory wall by computing in-situ, in the same place that the data is located. One of the key emerging technologies that promises to enable such computing-in-memory is spin-transfer torque magnetic tunnel junction (STT-MTJ). This paper proposes AM4, a combined STT-MTJ-based Content Addressable Memory (CAM), Ternary CAM (TCAM), approximate matching (similarity search) CAM (ACAM), and in-memory Associative Processor (AP) design, inspired by the recently announced Samsung MRAM crossbar. We demonstrate and evaluate the performance and energy-efficiency of the AM4-based AP using a variety of data intensive workloads. We show that an AM4-based AP outperforms state-of-the-art solutions both in performance (with the average speedup of about 10 ×) and energy-efficiency (by about 60 × on average).

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