An equivalent circuit characterization of power MOSFET accounting for high field and high frequency effects

Isaac Jacob, Eric Donkor

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

An equivalent circuit model for analyzing the AC characteristics of power VDMOS transistors is presented. The model accounts for high field and saturation effects. This is achieved by incorporating dependent voltage and current sources in the device model. Results are given for the AC characteristics of a POLYFET F2001 Power VDMOSFET rated with a drain current of 1.4A, power out of 2.5W at 1GHz. The linear, quasi-saturation and saturation regions of the IV characteristics are accounted for in the analysis. The small signal device parasitics are extracted through s-parameter methods. The s-parameter results were used to extract the frequency dependent parasitics including parasitic capacitances, inductances and transconductances.

Original languageEnglish
Pages (from-to)429-437
Number of pages9
JournalInternational Journal of Infrared and Millimeter Waves
Volume15
Issue number2
DOIs
StatePublished - 1 Feb 1994
Externally publishedYes

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