An optical method for studying carrier diffusion in strained (InP)2/(GaP)2 quantum wires

Y. Tang, D. H. Rich, A. M. Moy, K. Y. Cheng

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The carrier transport in strain-induced laterally ordered (InP)2/(GaP)2 quantum wire (QWR) samples was examined with a noncontact Haynes-Shockley diffusion measurement which utilized time-resolved scanning cathodoluminescence. An anisotropy in ambipolar diffusion along the [110] and [11̄0] directions (perpendicular and parallel to the QWRs, respectively) was observed. The temperature dependence of this anisotropy was measured, revealing that carrier diffusion along the QWR direction is thermally activated.

Original languageEnglish
Pages (from-to)55-57
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number1
DOIs
StatePublished - 1 Dec 1998
Externally publishedYes

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