Anderson Localization in Ferromagnetic Semiconductors Due to Spin Disorder. II. Wide Conduction Band

M. I. Auslender; E. M. Kogan; S. V. Tretyakov

doi:10.1002/pssb.2221480126

Anderson Localization in Ferromagnetic Semiconductors Due to Spin Disorder. II. Wide Conduction Band

M. I. Auslender, E. M. Kogan, S. V. Tretyakov

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Theoretical investigation are made of the temperature induced metal–insulator transition in doped ferromagnetic semiconductors described by the s–d(f) exchange model. The transition is the result of the mobility edge movement, the disorder being due to interaction of electrons with the magnetic‐ion spin density fluctuations. The electrons are described in effective mass approximation. The mobility edge is obtained from the simple criterion due to Ioffe‐Regel.

Original language	English
Pages (from-to)	289-295
Number of pages	7
Journal	physica status solidi (b)
Volume	148
Issue number	1
DOIs	https://doi.org/10.1002/pssb.2221480126
State	Published - 1 Jan 1988
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/pssb.2221480126

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title = "Anderson Localization in Ferromagnetic Semiconductors Due to Spin Disorder. II. Wide Conduction Band",

abstract = "Theoretical investigation are made of the temperature induced metal–insulator transition in doped ferromagnetic semiconductors described by the s–d(f) exchange model. The transition is the result of the mobility edge movement, the disorder being due to interaction of electrons with the magnetic‐ion spin density fluctuations. The electrons are described in effective mass approximation. The mobility edge is obtained from the simple criterion due to Ioffe‐Regel.",

author = "Auslender, {M. I.} and Kogan, {E. M.} and Tretyakov, {S. V.}",

year = "1988",

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AU - Kogan, E. M.

AU - Tretyakov, S. V.

PY - 1988/1/1

Y1 - 1988/1/1

N2 - Theoretical investigation are made of the temperature induced metal–insulator transition in doped ferromagnetic semiconductors described by the s–d(f) exchange model. The transition is the result of the mobility edge movement, the disorder being due to interaction of electrons with the magnetic‐ion spin density fluctuations. The electrons are described in effective mass approximation. The mobility edge is obtained from the simple criterion due to Ioffe‐Regel.

AB - Theoretical investigation are made of the temperature induced metal–insulator transition in doped ferromagnetic semiconductors described by the s–d(f) exchange model. The transition is the result of the mobility edge movement, the disorder being due to interaction of electrons with the magnetic‐ion spin density fluctuations. The electrons are described in effective mass approximation. The mobility edge is obtained from the simple criterion due to Ioffe‐Regel.

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Anderson Localization in Ferromagnetic Semiconductors Due to Spin Disorder. II. Wide Conduction Band

Abstract

ASJC Scopus subject areas

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