Anisotropic structural and electronic properties of InGaAs/GaAs heterojunctions

R. S. Goldman; K. Rammohan; A. Raisanen; M. Goorsky; L. J. Brillson; D. H. Rich; H. H. Wieder; K. L. Kavanagh

doi:10.1557/proc-340-349

Anisotropic structural and electronic properties of InGaAs/GaAs heterojunctions

R. S. Goldman, K. Rammohan, A. Raisanen, M. Goorsky, L. J. Brillson, D. H. Rich, H. H. Wieder, K. L. Kavanagh

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

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Abstract

We have investigated the structural and electronic properties of partially strain-relaxed In_xGa_1-xAs/GaAs heterojunctions, grown by molecular beam epitaxy (MBE) on both misoriented and nominally flat (001) GaAs substrates. Mobility measurements using Hall bars aligned along the [110] and [1̄10] in-plane directions reveal an asymmetry in bulk InGaAs electron mobility. This asymmetry is correlated with an anisotropic bulk strain relaxation and interfacial misfit dislocation density, determined from high-resolution x-ray rocking curves (XRC), as well as a polarization anisotropy in cathodoluminescence (CL).

Original language	English
Pages (from-to)	349-354
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	340
DOIs	https://doi.org/10.1557/proc-340-349
State	Published - 1 Jan 1994
Event	Proceedings of the MRS Symposium - San Francisco, CA, USA Duration: 4 Apr 1994 → 7 Apr 1994

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Anisotropic structural and electronic properties of InGaAs/GaAs heterojunctions",

abstract = "We have investigated the structural and electronic properties of partially strain-relaxed InxGa1-xAs/GaAs heterojunctions, grown by molecular beam epitaxy (MBE) on both misoriented and nominally flat (001) GaAs substrates. Mobility measurements using Hall bars aligned along the [110] and [{\=1}10] in-plane directions reveal an asymmetry in bulk InGaAs electron mobility. This asymmetry is correlated with an anisotropic bulk strain relaxation and interfacial misfit dislocation density, determined from high-resolution x-ray rocking curves (XRC), as well as a polarization anisotropy in cathodoluminescence (CL).",

author = "Goldman, {R. S.} and K. Rammohan and A. Raisanen and M. Goorsky and Brillson, {L. J.} and Rich, {D. H.} and Wieder, {H. H.} and Kavanagh, {K. L.}",

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doi = "10.1557/proc-340-349",

language = "English",

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journal = "Materials Research Society Symposium - Proceedings",

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TY - JOUR

T1 - Anisotropic structural and electronic properties of InGaAs/GaAs heterojunctions

AU - Goldman, R. S.

AU - Rammohan, K.

AU - Raisanen, A.

AU - Goorsky, M.

AU - Brillson, L. J.

AU - Rich, D. H.

AU - Wieder, H. H.

AU - Kavanagh, K. L.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - We have investigated the structural and electronic properties of partially strain-relaxed InxGa1-xAs/GaAs heterojunctions, grown by molecular beam epitaxy (MBE) on both misoriented and nominally flat (001) GaAs substrates. Mobility measurements using Hall bars aligned along the [110] and [1̄10] in-plane directions reveal an asymmetry in bulk InGaAs electron mobility. This asymmetry is correlated with an anisotropic bulk strain relaxation and interfacial misfit dislocation density, determined from high-resolution x-ray rocking curves (XRC), as well as a polarization anisotropy in cathodoluminescence (CL).

AB - We have investigated the structural and electronic properties of partially strain-relaxed InxGa1-xAs/GaAs heterojunctions, grown by molecular beam epitaxy (MBE) on both misoriented and nominally flat (001) GaAs substrates. Mobility measurements using Hall bars aligned along the [110] and [1̄10] in-plane directions reveal an asymmetry in bulk InGaAs electron mobility. This asymmetry is correlated with an anisotropic bulk strain relaxation and interfacial misfit dislocation density, determined from high-resolution x-ray rocking curves (XRC), as well as a polarization anisotropy in cathodoluminescence (CL).

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U2 - 10.1557/proc-340-349

DO - 10.1557/proc-340-349

M3 - Conference article

AN - SCOPUS:0028590696

SN - 0272-9172

VL - 340

SP - 349

EP - 354

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the MRS Symposium

Y2 - 4 April 1994 through 7 April 1994

ER -

Anisotropic structural and electronic properties of InGaAs/GaAs heterojunctions

Abstract

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