Anisotropic structural and electronic properties of InGaAs/GaAs heterojunctions

R. S. Goldman, K. Rammohan, A. Raisanen, M. Goorsky, L. J. Brillson, D. H. Rich, H. H. Wieder, K. L. Kavanagh

Research output: Contribution to journalConference articlepeer-review

Abstract

We have investigated the structural and electronic properties of partially strain-relaxed InxGa1-xAs/GaAs heterojunctions, grown by molecular beam epitaxy (MBE) on both misoriented and nominally flat (001) GaAs substrates. Mobility measurements using Hall bars aligned along the [110] and [1̄10] in-plane directions reveal an asymmetry in bulk InGaAs electron mobility. This asymmetry is correlated with an anisotropic bulk strain relaxation and interfacial misfit dislocation density, determined from high-resolution x-ray rocking curves (XRC), as well as a polarization anisotropy in cathodoluminescence (CL).

Original languageEnglish
Pages (from-to)349-354
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume340
DOIs
StatePublished - 1 Jan 1994
EventProceedings of the MRS Symposium - San Francisco, CA, USA
Duration: 4 Apr 19947 Apr 1994

ASJC Scopus subject areas

  • Materials Science (all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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