Anisotropic structural, electronic, and optical properties of InGaAs grown by molecular beam epitaxy on misoriented substrates

R. S. Goldman, H. H. Wieder, K. L. Kavanagh, K. Rammohan, D. H. Rich

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

We have investigated the structural, electronic, and optical properties of partially strain-relaxed InxGa1-xAs layers, grown by molecular beam epitaxy on both misoriented and nominally flat (001) GaAs substrates. We find large anisotropies in bulk strain relaxation, interfacial misfit dislocation density, dark-line defect density, and electron mobility, as well as a polarization anisotropy in cathodoluminescence for epilayers grown on misoriented substrates, in comparison with those grown on flat substrates.

Original languageEnglish
Pages (from-to)1424-1426
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number11
DOIs
StatePublished - 1 Jan 1994
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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