Anisotropy of Magnetoresistance of the p‐Type Ferromagnetic Semiconductor HgCr2Se4

V. A. Kostylev, B. A. Gizhevskii, A. A. Samokhvalov, M. I. Auslender, N. G. Bebenin

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


An experimental investigation is made of the anisotropy of magnetoresistance of the ferromagnetic p‐type semiconductor HgCr2Se4 on specimens doped with intrinsic defects and Ag. A simple theory is developed dealing with the magnetoresistance of the p‐type ferromagnetic semiconductor with Γ8 symmetry of the valence band top split by a strong exchange field produced by localized spins. The theory provides a good description of the experimental data.

Original languageEnglish
Pages (from-to)307-317
Number of pages11
Journalphysica status solidi (b)
Issue number1
StatePublished - 1 Jan 1990
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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