Anisotropy of Magnetoresistance of the p‐Type Ferromagnetic Semiconductor HgCr2Se4

V. A. Kostylev; B. A. Gizhevskii; A. A. Samokhvalov; M. I. Auslender; N. G. Bebenin

doi:10.1002/pssb.2221580131

Anisotropy of Magnetoresistance of the p‐Type Ferromagnetic Semiconductor HgCr₂Se₄

V. A. Kostylev, B. A. Gizhevskii, A. A. Samokhvalov, M. I. Auslender, N. G. Bebenin

Research output: Contribution to journal › Article › peer-review

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Abstract

An experimental investigation is made of the anisotropy of magnetoresistance of the ferromagnetic p‐type semiconductor HgCr₂Se₄ on specimens doped with intrinsic defects and Ag. A simple theory is developed dealing with the magnetoresistance of the p‐type ferromagnetic semiconductor with Γ₈ symmetry of the valence band top split by a strong exchange field produced by localized spins. The theory provides a good description of the experimental data.

Original language	English
Pages (from-to)	307-317
Number of pages	11
Journal	physica status solidi (b)
Volume	158
Issue number	1
DOIs	https://doi.org/10.1002/pssb.2221580131
State	Published - 1 Jan 1990
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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abstract = "An experimental investigation is made of the anisotropy of magnetoresistance of the ferromagnetic p‐type semiconductor HgCr2Se4 on specimens doped with intrinsic defects and Ag. A simple theory is developed dealing with the magnetoresistance of the p‐type ferromagnetic semiconductor with Γ8 symmetry of the valence band top split by a strong exchange field produced by localized spins. The theory provides a good description of the experimental data.",

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AU - Kostylev, V. A.

AU - Gizhevskii, B. A.

AU - Samokhvalov, A. A.

AU - Auslender, M. I.

AU - Bebenin, N. G.

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N2 - An experimental investigation is made of the anisotropy of magnetoresistance of the ferromagnetic p‐type semiconductor HgCr2Se4 on specimens doped with intrinsic defects and Ag. A simple theory is developed dealing with the magnetoresistance of the p‐type ferromagnetic semiconductor with Γ8 symmetry of the valence band top split by a strong exchange field produced by localized spins. The theory provides a good description of the experimental data.

AB - An experimental investigation is made of the anisotropy of magnetoresistance of the ferromagnetic p‐type semiconductor HgCr2Se4 on specimens doped with intrinsic defects and Ag. A simple theory is developed dealing with the magnetoresistance of the p‐type ferromagnetic semiconductor with Γ8 symmetry of the valence band top split by a strong exchange field produced by localized spins. The theory provides a good description of the experimental data.

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Anisotropy of Magnetoresistance of the p‐Type Ferromagnetic Semiconductor HgCr₂Se₄

Abstract

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