Abstract
An experimental investigation is made of the anisotropy of magnetoresistance of the ferromagnetic p‐type semiconductor HgCr2Se4 on specimens doped with intrinsic defects and Ag. A simple theory is developed dealing with the magnetoresistance of the p‐type ferromagnetic semiconductor with Γ8 symmetry of the valence band top split by a strong exchange field produced by localized spins. The theory provides a good description of the experimental data.
Original language | English |
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Pages (from-to) | 307-317 |
Number of pages | 11 |
Journal | physica status solidi (b) |
Volume | 158 |
Issue number | 1 |
DOIs | |
State | Published - 1 Jan 1990 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics