TY - JOUR
T1 - Anomalous Formation of Irradiation-Induced Nitrogen-Vacancy Centers in 5 nm-Sized Detonation Nanodiamonds
AU - So, Frederick T.K.
AU - Shames, Alexander I.
AU - Terada, Daiki
AU - Genjo, Takuya
AU - Morishita, Hiroki
AU - Ohki, Izuru
AU - Ohshima, Takeshi
AU - Onoda, Shinobu
AU - Takashima, Hideaki
AU - Takeuchi, Shigeki
AU - Mizuochi, Norikazu
AU - Igarashi, Ryuji
AU - Shirakawa, Masahiro
AU - Segawa, Takuya F.
N1 - Publisher Copyright:
© 2022 American Chemical Society. All rights reserved.
PY - 2022/3/24
Y1 - 2022/3/24
N2 - Nanodiamonds containing negatively charged nitrogen-vacancy (NV-) centers are versatile room-temperature quantum sensors in a growing field of research. Yet, knowledge regarding the NV-formation mechanism in very small particles is still limited. This study focuses on the formation of the smallest NV--containing diamonds, 5 nm detonation nanodiamonds (DNDs). As a reliable method to quantify NV-centers in nanodiamonds, half-field signals in electron paramagnetic resonance (EPR) spectroscopy are recorded. By comparing the NV-concentration with a series of nanodiamonds from high-pressure high-temperature (HPHT) synthesis (10-100 nm), it is shown that the formation process in 5 nm DNDs is unique in several aspects. NV-centers in DNDs are already formed at the stage of electron irradiation, without the need for high-temperature annealing, an effect related to the very small particle size. Also, the NV-concentration (in atomic ratio) in 5 nm DNDs surpasses that of 20 nm-sized nanodiamonds, which contradicts the observation that the NV-concentration generally increases with particle size. This can be explained by the 10 times higher concentration of substitutional nitrogen atoms in the studied DNDs ([NS≈ 1000 ppm]) compared to the HPHT nanodiamonds ([NS≈ 100 ppm]). Upon electron irradiation at a fluence of 1.5 × 1019e-/cm2, DNDs show a 12.5-fold increment in the NV-concentration with no sign of saturation reaching 1 out of about 80 DNDs containing an NV-center. These findings can be of interest for the creation of defects in other very small semiconductor nanoparticles beyond NV-nanodiamonds as quantum sensors.
AB - Nanodiamonds containing negatively charged nitrogen-vacancy (NV-) centers are versatile room-temperature quantum sensors in a growing field of research. Yet, knowledge regarding the NV-formation mechanism in very small particles is still limited. This study focuses on the formation of the smallest NV--containing diamonds, 5 nm detonation nanodiamonds (DNDs). As a reliable method to quantify NV-centers in nanodiamonds, half-field signals in electron paramagnetic resonance (EPR) spectroscopy are recorded. By comparing the NV-concentration with a series of nanodiamonds from high-pressure high-temperature (HPHT) synthesis (10-100 nm), it is shown that the formation process in 5 nm DNDs is unique in several aspects. NV-centers in DNDs are already formed at the stage of electron irradiation, without the need for high-temperature annealing, an effect related to the very small particle size. Also, the NV-concentration (in atomic ratio) in 5 nm DNDs surpasses that of 20 nm-sized nanodiamonds, which contradicts the observation that the NV-concentration generally increases with particle size. This can be explained by the 10 times higher concentration of substitutional nitrogen atoms in the studied DNDs ([NS≈ 1000 ppm]) compared to the HPHT nanodiamonds ([NS≈ 100 ppm]). Upon electron irradiation at a fluence of 1.5 × 1019e-/cm2, DNDs show a 12.5-fold increment in the NV-concentration with no sign of saturation reaching 1 out of about 80 DNDs containing an NV-center. These findings can be of interest for the creation of defects in other very small semiconductor nanoparticles beyond NV-nanodiamonds as quantum sensors.
UR - http://www.scopus.com/inward/record.url?scp=85127318539&partnerID=8YFLogxK
U2 - 10.1021/acs.jpcc.1c10466
DO - 10.1021/acs.jpcc.1c10466
M3 - Article
AN - SCOPUS:85127318539
SN - 1932-7447
VL - 126
SP - 5206
EP - 5217
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 11
ER -