APPLICATION OF CDTE EPITAXIAL LAYERS FOR PASSIVATION OF P-TYPE HG0.77CD0.23TE

G SARUSI; G CINADER; A ZEMEL; D EGER; Y SHAPIRA

APPLICATION OF CDTE EPITAXIAL LAYERS FOR PASSIVATION OF P-TYPE HG0.77CD0.23TE

G SARUSI, G CINADER, A ZEMEL, D EGER, Y SHAPIRA

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Abstract

We have investigated the properties of CdTe/Hg0.77Cd0.23Te heterostructures in order to evaluate the use of thin CdTe cap layers for passivation of the HgCdTe surfaces. The energy band diagram across the interface of this structure was calculated using Anderson’s model. It is found that flat or near flat band conditions can be obtained by using p‐type CdTe with carrier density in the range of 1014–1015 cm−3. CdTe/Hg0.77Cd0.23Te heterostructures were grown on CdTe (211)B oriented substrates using the metalorganic chemical vapor deposition technique. The interface properties of CdTe/HgCdTe were investigated by a combination of Hall and photoelectromagnetic effect measurements as a function of temperature, magnetic field, and light illumination wavelength. Interface recombination velocities of less than 5000 cm/s were obtained at 77 K for heterostructures grown under proper conditions. These values are more than two orders of magnitude lower than those obtained for freshly Br:methanol etched HgCdTe surfaces. These results demonstrate that CdTe cap layers may be used as a good passivation of HgCdTe surfaces.
REFERENCES

Original language	English GB
Pages (from-to)	5070-5076
Journal	Journal of Applied Physics
Volume	71
Issue number	10
State	Published - 15 May 1992

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title = "APPLICATION OF CDTE EPITAXIAL LAYERS FOR PASSIVATION OF P-TYPE HG0.77CD0.23TE",

abstract = "We have investigated the properties of CdTe/Hg0.77Cd0.23Te heterostructures in order to evaluate the use of thin CdTe cap layers for passivation of the HgCdTe surfaces. The energy band diagram across the interface of this structure was calculated using Anderson{\textquoteright}s model. It is found that flat or near flat band conditions can be obtained by using p‐type CdTe with carrier density in the range of 1014–1015 cm−3. CdTe/Hg0.77Cd0.23Te heterostructures were grown on CdTe (211)B oriented substrates using the metalorganic chemical vapor deposition technique. The interface properties of CdTe/HgCdTe were investigated by a combination of Hall and photoelectromagnetic effect measurements as a function of temperature, magnetic field, and light illumination wavelength. Interface recombination velocities of less than 5000 cm/s were obtained at 77 K for heterostructures grown under proper conditions. These values are more than two orders of magnitude lower than those obtained for freshly Br:methanol etched HgCdTe surfaces. These results demonstrate that CdTe cap layers may be used as a good passivation of HgCdTe surfaces.REFERENCES",

author = "G SARUSI and G CINADER and A ZEMEL and D EGER and Y SHAPIRA",

year = "1992",

month = may,

day = "15",

language = "אנגלית",

volume = "71",

pages = "5070--5076",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

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TY - JOUR

T1 - APPLICATION OF CDTE EPITAXIAL LAYERS FOR PASSIVATION OF P-TYPE HG0.77CD0.23TE

AU - SARUSI, G

AU - CINADER, G

AU - ZEMEL, A

AU - EGER, D

AU - SHAPIRA, Y

PY - 1992/5/15

Y1 - 1992/5/15

N2 - We have investigated the properties of CdTe/Hg0.77Cd0.23Te heterostructures in order to evaluate the use of thin CdTe cap layers for passivation of the HgCdTe surfaces. The energy band diagram across the interface of this structure was calculated using Anderson’s model. It is found that flat or near flat band conditions can be obtained by using p‐type CdTe with carrier density in the range of 1014–1015 cm−3. CdTe/Hg0.77Cd0.23Te heterostructures were grown on CdTe (211)B oriented substrates using the metalorganic chemical vapor deposition technique. The interface properties of CdTe/HgCdTe were investigated by a combination of Hall and photoelectromagnetic effect measurements as a function of temperature, magnetic field, and light illumination wavelength. Interface recombination velocities of less than 5000 cm/s were obtained at 77 K for heterostructures grown under proper conditions. These values are more than two orders of magnitude lower than those obtained for freshly Br:methanol etched HgCdTe surfaces. These results demonstrate that CdTe cap layers may be used as a good passivation of HgCdTe surfaces.REFERENCES

AB - We have investigated the properties of CdTe/Hg0.77Cd0.23Te heterostructures in order to evaluate the use of thin CdTe cap layers for passivation of the HgCdTe surfaces. The energy band diagram across the interface of this structure was calculated using Anderson’s model. It is found that flat or near flat band conditions can be obtained by using p‐type CdTe with carrier density in the range of 1014–1015 cm−3. CdTe/Hg0.77Cd0.23Te heterostructures were grown on CdTe (211)B oriented substrates using the metalorganic chemical vapor deposition technique. The interface properties of CdTe/HgCdTe were investigated by a combination of Hall and photoelectromagnetic effect measurements as a function of temperature, magnetic field, and light illumination wavelength. Interface recombination velocities of less than 5000 cm/s were obtained at 77 K for heterostructures grown under proper conditions. These values are more than two orders of magnitude lower than those obtained for freshly Br:methanol etched HgCdTe surfaces. These results demonstrate that CdTe cap layers may be used as a good passivation of HgCdTe surfaces.REFERENCES

M3 - מאמר

SN - 0021-8979

VL - 71

SP - 5070

EP - 5076

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

APPLICATION OF CDTE EPITAXIAL LAYERS FOR PASSIVATION OF P-TYPE HG0.77CD0.23TE

Abstract

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