Abstract
In the course of solid state device fabrication a multiplicity of steps are performed where material is being added to a substrate or removed from it. The Alpha Energy Loss Spectroscopy method provides information - either in real time or ex situ - about essential characteristics of these processes growth rate, layer thickness and stoichiometry, etching rate, surface morphology. The method consists of implanting alpha-emitting nuclei in the original substrate and measuring the energy lost by alpha-particles of well defined initial energy as they traverse the investigated layer. Specific examples where Radium-224, implanted by the alpha-induced recoil of Thorium-228, is used are presented and discussed
| Original language | English GB |
|---|---|
| Title of host publication | The 23rd Congress of the Nuclear Societies in Israel |
| Pages | 207 |
| State | Published - 2006 |