Abstract
The limited size and power budgets of space-bound systems often contradict the requirements for reliable circuit operation within high-radiation environments. In this paper, we propose the smallest solution for soft-error tolerant embedded memory yet to be presented. The proposed complementary dual-modular redundancy (CDMR) memory is based on a four-transistor dynamic memory core that internally stores complementary data values to provide an inherent per-bit error detection capability. By adding simple, low-overhead parity, an error-correction capability is added to the memory architecture for robust soft-error protection. The proposed memory was implemented in a 65-nm CMOS technology, displaying as much as a 3.5×1 smaller silicon footprint than other radiation-hardened bitcells. In addition, the CDMR memory consumes between 48% and 87% less standby power than other considered solutions across the entire operating region.
| Original language | English |
|---|---|
| Pages (from-to) | 502-509 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Very Large Scale Integration (VLSI) Systems |
| Volume | 25 |
| Issue number | 2 |
| DOIs | |
| State | Published - 1 Feb 2017 |
| Externally published | Yes |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- Embedded dynamic random access memory (eDRAM)
- gain cell
- low power
- radiation hardening
- single event upset (SEU)
- soft errors
- space applications
- static RAM (SRAM)
ASJC Scopus subject areas
- Software
- Hardware and Architecture
- Electrical and Electronic Engineering
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