Atom chips

R. Folman; P. Kruger; D. Cassettari; B. Hessmo; T. Maier; J. Schmiedmayer

Atom chips

R. Folman, P. Kruger, D. Cassettari, B. Hessmo, T. Maier, J. Schmiedmayer

Research output: Contribution to conference › Paper › peer-review

Abstract

The traps and guides for neutral atoms on a nano-fabricated chip are investigated. The chip is made of a 2.5 μm gold layer placed on a GaAs substrate, the patterns are created by standard nanofabrication processes. Results show that the trap parameters with a transverse ground state size below 100 nm and frequencies of above 100 kHz are achieved. Atoms can be trapped and guided exclusively with the fields created on the chip. It is shown that a wide variety of magnetic potentials may be realized.

Original language	English
Pages	205
Number of pages	1
State	Published - 1 Jan 2000
Externally published	Yes
Event	2000 International Quantum Electronics Conference (IQEC 2000) - Nice, France Duration: 10 Sep 2000 → 15 Sep 2000

Conference

Conference	2000 International Quantum Electronics Conference (IQEC 2000)
City	Nice, France
Period	10/09/00 → 15/09/00

ASJC Scopus subject areas

General Physics and Astronomy

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

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title = "Atom chips",

abstract = "The traps and guides for neutral atoms on a nano-fabricated chip are investigated. The chip is made of a 2.5 μm gold layer placed on a GaAs substrate, the patterns are created by standard nanofabrication processes. Results show that the trap parameters with a transverse ground state size below 100 nm and frequencies of above 100 kHz are achieved. Atoms can be trapped and guided exclusively with the fields created on the chip. It is shown that a wide variety of magnetic potentials may be realized.",

author = "R. Folman and P. Kruger and D. Cassettari and B. Hessmo and T. Maier and J. Schmiedmayer",

year = "2000",

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TY - CONF

T1 - Atom chips

AU - Folman, R.

AU - Kruger, P.

AU - Cassettari, D.

AU - Hessmo, B.

AU - Maier, T.

AU - Schmiedmayer, J.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - The traps and guides for neutral atoms on a nano-fabricated chip are investigated. The chip is made of a 2.5 μm gold layer placed on a GaAs substrate, the patterns are created by standard nanofabrication processes. Results show that the trap parameters with a transverse ground state size below 100 nm and frequencies of above 100 kHz are achieved. Atoms can be trapped and guided exclusively with the fields created on the chip. It is shown that a wide variety of magnetic potentials may be realized.

AB - The traps and guides for neutral atoms on a nano-fabricated chip are investigated. The chip is made of a 2.5 μm gold layer placed on a GaAs substrate, the patterns are created by standard nanofabrication processes. Results show that the trap parameters with a transverse ground state size below 100 nm and frequencies of above 100 kHz are achieved. Atoms can be trapped and guided exclusively with the fields created on the chip. It is shown that a wide variety of magnetic potentials may be realized.

UR - http://www.scopus.com/inward/record.url?scp=0033695487&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0033695487

SP - 205

T2 - 2000 International Quantum Electronics Conference (IQEC 2000)

Y2 - 10 September 2000 through 15 September 2000

ER -

Atom chips

Abstract

Conference

ASJC Scopus subject areas

UN SDGs

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