@article{1cd04e569f15425c8876f86107c611f3,
title = "Atom chips: Fabrication and thermal properties",
abstract = "A method for fabricating atom chips with a lithographic lift-off process was discussed. Wires that can tolerate high current densities of >10 7 A/cm2 were produced with this method. It was found that the fabrication process leads to very accurate edge and bulk features, limited by the grain size of 50-80 nm. Among the materials tested, silicon was found to be the best suited substrate for atom chips.",
author = "S. Groth and P. Kr{\"u}ger and S. Wildermuth and R. Folman and T. Fernholz and J. Schmiedmayer and D. Mahalu and I. Bar-Joseph",
note = "Funding Information: The authors thank T. Maier and K. Unterrainer of the Mikrostrukturlabor der TU-Wien for valuable discussions and their insight in developing the initial fabrication process this work is based on, O. Raslin for her help in the fabrication process and C. Becker and A. Mair for their help with the test measurements. This work was supported by the European Union, Contract Nos. IST-2001-38863 (ACQP) and HPRI-CT-1999-00114 (LSF) and the Deutsche Forschungsgemeinschaft, Schwerpunktprogramm “Quanteninformationsverarbeitung.” ",
year = "2004",
month = oct,
day = "4",
doi = "10.1063/1.1804601",
language = "English",
volume = "85",
pages = "2980--2982",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "14",
}