Atomic fluorine beam etching of silicon and related materials

P. R. Larson, K. A. Copeland, G. Dharmasena, R. A. Lasell, M. Keil, M. B. Johnson

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The application atomic fluorine beams to rapidly etch silicon, silicon nitride and SiO2 is described. The open-area etch results and obtained anisotropic trenches are also discussed. Results reveal Si etch-rate dependence on sample temperature. Furthermore, there exist etch selectivities to SiO2 and Si3N4.

Original languageEnglish
Pages (from-to)307-312
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number1
DOIs
StatePublished - 1 Jan 2000
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Atomic fluorine beam etching of silicon and related materials'. Together they form a unique fingerprint.

Cite this