Atomic fluorine beam etching of silicon and related materials

P. R. Larson, K. A. Copeland, G. Dharmasena, R. A. Lasell, M. Keil, M. B. Johnson

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


The application atomic fluorine beams to rapidly etch silicon, silicon nitride and SiO2 is described. The open-area etch results and obtained anisotropic trenches are also discussed. Results reveal Si etch-rate dependence on sample temperature. Furthermore, there exist etch selectivities to SiO2 and Si3N4.

Original languageEnglish
Pages (from-to)307-312
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number1
StatePublished - 1 Jan 2000
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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