The application atomic fluorine beams to rapidly etch silicon, silicon nitride and SiO2 is described. The open-area etch results and obtained anisotropic trenches are also discussed. Results reveal Si etch-rate dependence on sample temperature. Furthermore, there exist etch selectivities to SiO2 and Si3N4.
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - 1 Jan 2000|