Atomic Layer Deposition of p-Type Epitaxial Thin Films of Undoped and N-Doped Anatase TiO2

K. Vasu, M. B. Sreedhara, J. Ghatak, C. N.R. Rao

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Abstract

Employing atomic layer deposition, we have grown p-type epitaxial undoped and N-doped anatase TiO2(001) thin films on c-axis Al2O3 substrate. From X-ray diffraction and transmission electron microscopy studies, crystallographic relationships between the film and the substrate are found to be (001)TiO2//(0001)Al2O3 and [110]TiO2//[0110]Al2O3. N-doping in TiO2 thin films enhances the hole concentration and mobility. The optical band gap of anatase TiO2 (3.23 eV) decreases to 3.07 eV upon N-doping. The epitaxial films exhibit room-temperature ferromagnetism and photoresponse. A TiO2-based homojunction diode was fabricated with rectification from the p-n junction formed between N-doped p-TiO2 and n-TiO2. (Graph Presented).

Original languageEnglish
Pages (from-to)7897-7901
Number of pages5
JournalACS applied materials & interfaces
Volume8
Issue number12
DOIs
StatePublished - 30 Mar 2016
Externally publishedYes

Keywords

  • atomic layer deposition
  • epitaxial thin films
  • N-doped TiO thin films
  • p-n homojunction
  • p-type conductivity
  • photoresponse
  • room-temperature ferromagnetism

ASJC Scopus subject areas

  • Materials Science (all)

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