Back illuminated CMOS APS with low crosstalk level

Y. David, U. Efron

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


A new technological solution for backside illuminated CMOS imagers is proposed. The pixel area consists of an n-well/substrate photo diode and a deep p-well, which contains the APS pixel circuitry as well as additional application specific circuits. This structure was analyzed using Silvaco's ATLAS device simulator. Simulation results show that this structure provides low cross-talk, high photo response and effectively shields the pixel circuitry from the photo charges generated in the substrate. The deep p-well pixel technology allows increasing the thickness of the die up to 30 micrometers, thus improving its mechanical ruggedness following the thinning process. Such deep p-well imager structure will also be integrated into the Image Transceiver Device, which combines a front side LCOS micro display with a back-illuminated imager.

Original languageEnglish
Title of host publicationInfrared Systems and Photoelectronic Technology II
StatePublished - 1 Dec 2007
EventInfrared Systems and Photoelectronic Technology II - San Diego, CA, United States
Duration: 26 Aug 200728 Aug 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceInfrared Systems and Photoelectronic Technology II
Country/TerritoryUnited States
CitySan Diego, CA


  • APS
  • Back-illuminated
  • CMOS image sensor
  • Crosstalk
  • Deep p-well
  • Image transceiver
  • Simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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