Back illuminated CMOS APS with low crosstalk level

Y. David; U. Efron

doi:10.1117/12.732809

Back illuminated CMOS APS with low crosstalk level

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A new technological solution for backside illuminated CMOS imagers is proposed. The pixel area consists of an n-well/substrate photo diode and a deep p-well, which contains the APS pixel circuitry as well as additional application specific circuits. This structure was analyzed using Silvaco's ATLAS device simulator. Simulation results show that this structure provides low cross-talk, high photo response and effectively shields the pixel circuitry from the photo charges generated in the substrate. The deep p-well pixel technology allows increasing the thickness of the die up to 30 micrometers, thus improving its mechanical ruggedness following the thinning process. Such deep p-well imager structure will also be integrated into the Image Transceiver Device, which combines a front side LCOS micro display with a back-illuminated imager.

Original language	English
Title of host publication	Infrared Systems and Photoelectronic Technology II
DOIs	https://doi.org/10.1117/12.732809
State	Published - 1 Dec 2007
Event	Infrared Systems and Photoelectronic Technology II - San Diego, CA, United States Duration: 26 Aug 2007 → 28 Aug 2007

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6660
ISSN (Print)	0277-786X

Conference

Conference	Infrared Systems and Photoelectronic Technology II
Country/Territory	United States
City	San Diego, CA
Period	26/08/07 → 28/08/07

Keywords

APS
Back-illuminated
CMOS image sensor
Crosstalk
Deep p-well
Image transceiver
Simulation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.732809

Cite this

@inproceedings{dc4c7dd6d6f84e5d9654ff7207d3018e,

title = "Back illuminated CMOS APS with low crosstalk level",

abstract = "A new technological solution for backside illuminated CMOS imagers is proposed. The pixel area consists of an n-well/substrate photo diode and a deep p-well, which contains the APS pixel circuitry as well as additional application specific circuits. This structure was analyzed using Silvaco's ATLAS device simulator. Simulation results show that this structure provides low cross-talk, high photo response and effectively shields the pixel circuitry from the photo charges generated in the substrate. The deep p-well pixel technology allows increasing the thickness of the die up to 30 micrometers, thus improving its mechanical ruggedness following the thinning process. Such deep p-well imager structure will also be integrated into the Image Transceiver Device, which combines a front side LCOS micro display with a back-illuminated imager.",

keywords = "APS, Back-illuminated, CMOS image sensor, Crosstalk, Deep p-well, Image transceiver, Simulation",

author = "Y. David and U. Efron",

year = "2007",

month = dec,

day = "1",

doi = "10.1117/12.732809",

language = "English",

isbn = "9780819468086",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Infrared Systems and Photoelectronic Technology II",

note = "Infrared Systems and Photoelectronic Technology II ; Conference date: 26-08-2007 Through 28-08-2007",

}

TY - GEN

T1 - Back illuminated CMOS APS with low crosstalk level

AU - David, Y.

AU - Efron, U.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - A new technological solution for backside illuminated CMOS imagers is proposed. The pixel area consists of an n-well/substrate photo diode and a deep p-well, which contains the APS pixel circuitry as well as additional application specific circuits. This structure was analyzed using Silvaco's ATLAS device simulator. Simulation results show that this structure provides low cross-talk, high photo response and effectively shields the pixel circuitry from the photo charges generated in the substrate. The deep p-well pixel technology allows increasing the thickness of the die up to 30 micrometers, thus improving its mechanical ruggedness following the thinning process. Such deep p-well imager structure will also be integrated into the Image Transceiver Device, which combines a front side LCOS micro display with a back-illuminated imager.

AB - A new technological solution for backside illuminated CMOS imagers is proposed. The pixel area consists of an n-well/substrate photo diode and a deep p-well, which contains the APS pixel circuitry as well as additional application specific circuits. This structure was analyzed using Silvaco's ATLAS device simulator. Simulation results show that this structure provides low cross-talk, high photo response and effectively shields the pixel circuitry from the photo charges generated in the substrate. The deep p-well pixel technology allows increasing the thickness of the die up to 30 micrometers, thus improving its mechanical ruggedness following the thinning process. Such deep p-well imager structure will also be integrated into the Image Transceiver Device, which combines a front side LCOS micro display with a back-illuminated imager.

KW - APS

KW - Back-illuminated

KW - CMOS image sensor

KW - Crosstalk

KW - Deep p-well

KW - Image transceiver

KW - Simulation

UR - https://www.scopus.com/pages/publications/42149093136

U2 - 10.1117/12.732809

DO - 10.1117/12.732809

M3 - Conference contribution

AN - SCOPUS:42149093136

SN - 9780819468086

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Infrared Systems and Photoelectronic Technology II

T2 - Infrared Systems and Photoelectronic Technology II

Y2 - 26 August 2007 through 28 August 2007

ER -

Back illuminated CMOS APS with low crosstalk level

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this